cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 1/7 MTN4N01Q8 cystek product specification n-channel enhancement mode power mosfet MTN4N01Q8 description the MTN4N01Q8 is a n-channel enhancement-mode mosfet, providing the designer with the best bv dss 20v r dson(max) 30m i d 6a combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati ons such as dc/dc converters. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? low voltage drive (2.5v) ? pb-free lead plating package symbol outline MTN4N01Q8 sop-8 g gate d drain s source ordering information device package shipping mtp4n01q8 sop-8 (pb-free lead plating package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 2/7 MTN4N01Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v continuous drain current @ t a =25 c, v gs =4.5v i d 6 *1 a continuous drain current @ t a =70 c, v gs =4.5v i d 4.8 *1 a pulsed drain current i dm 20 *2 a w total power dissipation linear derating factor p d 2.5 0.02 w/ c thermal resistance, junction-to-ambient, max r th,j-a 50 *1 c/w operating junction and storage temp erature range tj, tstg -55~+150 c note : 1. surface mounted on 1 in 2 copper pad of fr-4 board, 125 c/w when mounted on minimum copper pad. 2. pulse width limited by maximum junction temperature. characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, i d =250 a v gs(th) 0.6 - 1.2 v v ds = v gs , i d =250 a g fs - 10 - s v ds =2.5v, i d =2a i gss - - d 100 na v gs = d 10 i dss - - 1 a v ds =20v, v gs =0 i dss - - 25 a v ds =16v, v gs =0, tj=70 c - - 30 m v gs =4.5v, i d =4.2a *r ds(on) - - 40 m v gs =2.5v, i d =2a dynamic *qg - 11 16 *qgs - 2 - *qgd - 3 - nc i d =4.2a, v ds =12v, v gs =4.5v *t d(on) - 13 - *tr - 35 - *t d(off) - 45 - *t f - 50 - ns v ds =12v, i d =4.2a, v gs =4.5v, r g =2.3 ciss - 870 1200 coss - 260 - crss - 60 - pf v gs =0v, v ds =10v, f=1mhz source-drain diode *v sd - - 1.2 v i s =1.7a, v gs =0v *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 3/7 MTN4N01Q8 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 4/7 MTN4N01Q8 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 5/7 MTN4N01Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 6/7 MTN4N01Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c804q8 issued date : 2009.12.16 revised date : 2011.03.21 page no. : 7/7 MTN4N01Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches 8-lead sop-8 plastic package cystek packa g e code: q8 marking: top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name 4n01sc millimeters dim min. max. min. max. dim min. max. min. max. a 0.1890 0.2007 4.80 5.10 i 0.0098 ref 0.25 ref b 0.1496 0.1654 3.80 4.20 j 0.0118 0.0354 0.30 0.90 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0138 0.0193 0.35 0.49 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0531 0.0689 1.35 1.75 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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