to-92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors CJ303NL transistor (npn) features z high dc current gain z ultra low collector-emitter saturation voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 5 v i c collector current 3 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature range -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 35 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 100 na collector cut-off current i ces v ces =35v 100 na emitter cut-off current i ebo v eb =4v,i c =0 100 na v ce =1.5v, i c =1a 100 v ce =1.5v, i c =1.5a 100 400 dc current gain h fe * v ce =3v, i c =2a 100 i c =0.8a,i b =26ma 0.15 v i c =1.2a,i b =40ma 0.2 v i c =2a,i b =66.6ma 0.25 v collector-emitter saturation voltage v ce(sat) * i c =3a,i b =100ma 0.4 v i c =1.2a,i b =40ma 1 v base-emitter saturation voltage v be(sat) * i c =3a,i b =100ma 1.2 v base-emitter voltage v be * v ce =3v, i c =2a 1 v transition frequency f t v ce =5v,i c =100ma, f=100mhz 100 mhz collector input capacitance c ib v eb =0.5v,i c =0, f=1mhz 650 pf collector output capacitance c ob v cb =3v,i e =0, f=1mhz 100 pf turn on time t on v cc =10v, i c =1a, i b1 = 100ma,r l =3 ? 35 ns turn off time t off v cc =10v, i c =1a, i b1 = -i b2 =100ma,r l =3 ? 225 ns *pulse width=300 s, duty cycle 2%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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