BLV20 description n-p-n silicon planar epitaxial transistor intended for use in class-a, b and c operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. it has a 3/8" flange envelope with a ceramic cap. all leads are isolated from the flange. pinning-sot123 pin 1 2 3 4 description collector emitter base emitter quick reference data r.f performance up to th = 25 c in an unneutralized common-emitter class-b circuit mode of operation c.w. vce v 28 f mhz 175 pl w 8 gp db >12 t1 % > 65 z| q 1,8+ jo, 7 yl ms 18-j20 pin configuration fig.1 simplified outline and symbol. ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe = 0) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) collector current (average) collector current (peak value); f > 1 mhz r.f. power dissipation (f > 1 mhz); tmb = 25 c storage temperature operating junction temperature vcesm vceo vebo 'c(av) 'cm prf tstg t, 65 v 36 v 4 v 0,9 a 2,5 a 20 w -65 to+ 150 "c max. 200 c max. max. max. max. max. max. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. qunlih/
vce,v? fig.2 d.c. soar. 100 i continuous d.c, operation ii continuous r.f operation iii short-time operation during mismatch fig.3 r.f. power dissipation; vce < 28 v; f > 1 mhz. thermal resistance (dissipation = 8 w; tmb = 72,4 c, i.e. th = 70 c) from junction to mounting base (d.c. dissipation) from junction to mounting base (r.f. dissipation) from mounting base to heatsink characteristics tj = 25 "c collector-emitter breakdown voltage vbe = 0; lc = 2 ma collector-emitter breakdown voltage open base; lc = 10 ma emitter-base breakdown voltage open collector; ie = 1 ma collector cut-off current vbe = 0; vce = 36 v second breakdown energy; l = 25 mh; f = 50 hz open base rbe= 10 q d.c. current gain <1) lc = 0,4 a; vce = 5 v collector-emitter saturation voltage f) lc= 1,25 a; ib = 0,25 a transition frequency atf = 100 mhz <1> -ie = 0,4 a; vcb = 28 v -ie = 1,25 a; vcb = 28 v collector capacitance atf = 1 mhz ie = le = 0; vcb = 28 v feedback capacitance at f = 1 mhz lc = 50 ma; vce = 28 v collector-flange capacitance note 1. measured under pulse conditions: tp < 200 (is; 5 < 0,02. fh j-mb(dc) rthj-mb(rf) rth mb-h 10,7 k/w 8,6 k/w 0,3 k/w v(br)ces v(br)ceo v(br)ebo 'ces esbo esbr > 65 v > 36 v > 4v < 1 ma > 0,5 mj > 0,5 mj typ. 50 10 to 100 vce. fr ft ore cof isat typ. 0,8 v typ. 600 mhz typ. 520 mhz typ. 10 pf typ 7,1 pf typ 2 pf
vhp power transistor BLV20 package outline flanged ceramic package; 2 mounting holes; 4 leads sot123a d ?i u1 10 mm dimensions (millimetre dimensions are derived from the original inch dimensions) b : 5,82 556 : 0 229 0219 c 0,18 0,10 0,007 0,004 d 9.73 947 0383 0.373 d1 9.63 942 0.397 0.371 f 2,72 231 0107 0091 h 2071 1993 0.815 0785 l 5.61 516 0.221 0203 p q 3.33 3.04 0 131 0.120 463 4 11 0182 0162 q 1842 0.725 "1 u2 2515 661 24 38 ^ 6 09 0,99 '? 0,26 0,96 ; 0,24 "3 9.78 9.39 0.385 0.370 w1 0.51 0,02 w2 n 1,02 i 45 0,04 outline version sot123a references iec jedec eiaj
|
