february 2014 ?2014 fairchild semiconductor corporation FDMC86259P rev.c www.fairchildsemi.com 1 FDMC86259P p-channel powertrench ? mosfet FDMC86259P p-channel powertrench ? mosfet -150 v, -13 a, 107 m features max r ds(on) = 107 m at v gs = -10 v, i d = -3 a max r ds(on) = 137 m at v gs = -6 v, i d = -2.7 a very low rds-on mid voltage p channel silicon technology optimised for low qg this product is optimised for fast switching applications as well as load switch applications 100% uil tested rohs compliant general description this p-channel mosfet is produced using fairchild semiconductors advanced powertrench ? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. applications active clamp switch load switch bottom top pin 1 pin 1 g d s s s d d d s s s g d d d d power 33 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -150 v v gs gate to source voltage 25 v i d drain current -continuous t c = 25 c -13 a -continuous t a = 25 c (note 1a) -3.2 -pulsed -20 e as single pulse avalanche energy (note 3) 181 mj p d power dissipation t c = 25 c 62 w power dissipation t a = 25 c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to + 150 c r jc thermal resistance, junction to case 2.0 c/w r ja thermal resistance, junction to ambient (note 1a) 53 device marking device package reel size tape width quantity FDMC86259P FDMC86259P power 33 13 12 mm 3000 units
www.fairchildsemi.com 2 ?2014 fairchild semiconductor corporation FDMC86259P rev.c FDMC86259P p-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -150 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -88 mv/c i dss zero gate voltage drain current v ds = -120 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 25 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a-2-2.8-4v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 6 mv/c r ds(on) static drain to source on resistance v gs = -10 v, i d = -3 a 87 107 m v gs = -6 v, i d = -2.7 a 99 137 v gs = -10 v, i d = -3 a,t j = 125 c 145 178 g fs forward transconductance v ds = -10 v, i d = -3 a 12 s c iss input capacitance v ds = -75 v, v gs = 0 v, f = 1 mhz 1535 2045 pf c oss output capacitance 125 170 pf c rss reverse transfer capacitance 6 10 pf r g gate resistance 0.1 1.4 3 t d(on) turn-on delay time v dd = -75 v, i d = -3 a, v gs = -10 v, r gen = 6 12 23 ns t r rise time 3.3 10 ns t d(off) turn-off delay time 22 36 ns t f fall time 9.6 20 ns q g(tot) total gate charge v gs = 0 v to -10 v v dd = -75 v, i d = -3 a 22 32 nc q g(tot) total gate charge v gs = 0 v to -6 v 14 20 nc q gs total gate charge 5.7 nc q gd gate to drain miller charge 4.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = -3 a (note 2) -0.80 -1.3 v v gs = 0 v, i s = -1.9 a (note 2) -0.78 -1.2 v t rr reverse recovery time i f = -3 a, di/dt = 100 a/ s 77 123 ns q rr reverse recovery charge 208 333 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c; p-ch: l = 3 mh, i as = -11 a, v dd = -150 v, v gs = -10 v. 100% test at l = 0.1 mh, i as = -34 a. g df ds sf ss a) 53 c/w when mounted on a 1 in 2 p a d o f 2 o z c o p p e r g df ds sf ss b) 125 c/w when mounted on a minimum pad of 2 oz copper
www.fairchildsemi.com 3 ?2014 fairchild semiconductor corporation FDMC86259P rev.c FDMC86259P p-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 5 10 15 20 v gs = -4.5 v v gs = -4 v v gs = -5 v pulse duration = 80 s duty cycle = 0.5% max v gs = -6 v v gs = -10 v -i d , drain current (a) -v ds , drain to source voltage (v) on region characteristics figure 2. 0 5 10 15 20 0 1 2 3 4 v gs = -4 v v gs = -4.5 v pulse duration = 80 s duty cycle = 0.5% max normalized drain to source on-resistance -i d , drain current (a) v gs = -5 v v gs = -6 v v gs = -10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i d = -3 a v gs = -10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 345678910 50 100 150 200 250 300 t j = 125 o c i d =-3 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0 5 10 15 20 t j = 150 o c v ds = -5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 30 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2014 fairchild semiconductor corporation FDMC86259P rev.c FDMC86259P p-channel powertrench ? mosfet figure 7. 0 5 10 15 20 25 0 2 4 6 8 10 i d = -3 a v dd = -100 v v dd = -75 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -50 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 100 t j = 125 o c t j = 25 o c t j = 100 o c t av , time in avalanche (ms) -i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 4 8 12 16 20 v gs = -6 v limited by package r jc = 2.0 o c/w v gs = -10 v -i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature fi g ure 11 . fo rw ard bi as safe op erating area 0.1 1 10 100 500 0.01 0.1 1 10 100 curve bent to measured data 10 s dc 10 ms 1 ms 100 s -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r jc = 2.0 o c/w t c = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 20000 single pulse r jc = 2.0 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 ?2014 fairchild semiconductor corporation FDMC86259P rev.c FDMC86259P p-channel powertrench ? mosfet figure 13. 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.005 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: z jc (t) = r(t) x r jc r jc = 2.0 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z jc (t) + t c junction-to-case transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 ?2014 fairchild semiconductor corporation FDMC86259P rev.c FDMC86259P p-channel powertrench ? mosfet dimensional outline and pad layout notes: unless otherwise specified a) package standard reference: jedec mo-240, issue a, var. ba, dated october 2002. b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-1994. e) drawing file name: pqfn08hrev1 8 1 5 4 4 1 85 land pattern recommendation 14 85 pkg c l pkg l c pkg l c l c sym pkg c l a b detail a scale: 2x see detail a 3.40 3.20 3. 40 3. 20 1. 95 0. 65 0.37 0.27 (8x) 0.50 0.30 2.05 1.85 0.10 c a b (0.34) (2.27) (0.52 typ) 0.25 0.15 0. 80 0. 70 0.10 c 0.08 c 0. 05 0. 00 c seating plane 2.37 min (0.45) (0.40) (0.65) 2.15 min 0.70 min 0.42 min (8x) 1.95 0. 65 pi n 1 indicator (0.33) typ package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the ter ms of fairchild's worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/pq/pqfn08h.pdf .
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