?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a rhru7570, rhru7580, RHRU7590, rhru75100 75a, 700v - 1000v hyperfast diode package jedec style single lead to-218 top view symbol anode cathode (flange) k a features hyperfast with soft recovery . . . . . . . . . . . . . . . . <85ns operating temperature . . . . . . . . . . . . . . . . . . . . +175 o c reverse voltage up to . . . . . . . . . . . . . . . . . . . . . . 1000v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose description rhru7570, rhru7580, RHRU7590 and rhru75100 (ta49068) are hyperfast diodes with soft recovery character- istics (t rr < 85ns). they have half the recovery time of ultrafast diodes and are silicon nitride passivated ion- implanted epitaxial planar construction. these devices are intended for use as freewheeling/clamp- ing diodes and recti?rs in a variety of switching power sup- plies and other power switching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reduc- ing power loss in the switching transistors. these devices are supplied in the single lead jedec style to-218 plastic package. due to space limitations, the brand on the rhru75100 is abbreviated to hru75100. to order this part use the full part number, i.e. rhru75100. march 2001 absolute maximum ratings (t c = +25 o c), unless otherwise speci?d rhru7570 rhru7580 RHRU7590 rhru75100 units peak repetitive reverse voltagev rrm 700 800 900 1000 v working peak reverse voltagev rwm 700 800 900 1000 v dc blocking voltagev r 700 800 900 1000 v average recti?d forward currenti f(av) (t c = +52 o c) 75 75 75 75 a repetitive peak surge currenti fsm (square wave, 20khz) 150 150 150 150 a nonrepetitive peak surge currenti fsm (halfwave, 1 phase, 60hz) 750 750 750 750 a maximum power dissipationp d 190 190 190 190 w avalanche energy (l = 40mh) (see figures 10 and 11)e avl 50 50 50 50 mj operating and storage temperaturet stg ,t j -65 to +175 -65 to +175 -65 to +175 -65 to +175 o c
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a speci?ations rhru7570, rhru7580, RHRU7590, rhru75100 electrical speci?ations t c = +25 o c, unless otherwise speci?d symbol test condition rhru7570 rhru7580 RHRU7590 rhru75100 units min typ max min typ max min typ max min typ max v f i f = 75a, t c = +25 o c - - 3.0 - - 3.0 - - 3.0 - - 3.0 v i f = 75a, t c = +150 o c - - 2.5 - - 2.5 - - 2.5 - - 2.5 v i r v r = 700v, t c = +25 o c--50--------- a v r = 800v, t c = +25 o c-----50------ a v r = 900v, t c = +25 o c--50 a v r = 1000v, t c = +25 o c-----------50 a i r v r = 700v, t c = +150 o c--2.0---------ma v r = 800v, t c = +150 o c-----2.0------ma v r = 900v, t c = +150 o c - - 2.0 ma v r = 1000v, t c = +150 o c -----------2.0ma t rr i f = 1a, di f /dt = 100a/ s- -85- -85- -85- -85ns i f = 75a, di f /dt = 100a/ s - - 100 - - 100 - - 100 - - 100 ns t a i f = 75a, di f /dt = 100a/ s -55- -55- -55- -55- ns t b i f = 75a, di f /dt = 100a/ s -40- -40- -40- -40- ns q rr i f = 75a, di f /dt = 100a/ s - 240 - - 240 - - 240 - - 240 - nc c j v r = 10v, i f = 0a - 220 - - 220 - 220 - 220 - pf r jc - - 0.8 - - 0.8 0.8 - - 0.8 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%) i r = instantaneous reverse current t rr = reverse recovery time (figure 2), summation of t a + t b t a = time to reach peak reverse current (see figure 2). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 2) q rr = reverse recovery charge c j = junction capacitance r jc = thermal resistance junction to case pw = pulse width d = duty cycle
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a figure 1. t rr test circuit figure 2. t rr waveforms and definitions c1 l loop dut q 3 r 3 q 4 q 2 r 1 r 2 -v 4 q 1 -v 2 0 0 +v 1 t 1 t 2 t 3 r 4 +v 3 v 1 amplitude controls i f v 2 amplitude controls di f /dt l 1 = self inductance of t 1 5t a(max) t 2 > t rr t 3 > 0 l 1 r 4 t a(min) 10 r 4 + l loop dt di f i f t rr t a t b 0 i rm 0.25 i rm v r v rm
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a rhru7570, rhru7580, RHRU7590, rhru75100 typical performance curves figure 3. typical forward current vs. forward voltage drop figure 4. typical reverse current vs. reverse voltage figure 5. typical t rr , t a and t b curves vs. forward current at +25 o c figure 6. typical t rr , t a and t b curves vs. forward current at +100 o c v f , forward voltage - (v) i f , forward current - (a) 1 100 10 0 1 2 3 +175 o c +100 o c 400 4 5 +25 o c v r , reverse voltage - (v) 0 200 400 600 800 1000 100 0.01 0.1 1 10 i r , reverse current - (?) 1000 +175 o c +100 o c +25 o c t c = +25 o c t rr i f , forward current - (a) t, recovery times - (ns) 75 0 100 10 1 t b 80 t a 60 40 20 t, recovery times - (ns) i f , forward current - (a) 75 10 1 0 50 200 100 150 t rr t a t b t c = +100 o c 300 250
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a rhru7570, rhru7580, RHRU7590, rhru75100 figure 7. typical t rr , t a and t b curves vs. forward current at +175 o c figure 8. current derating curve for all types figure 9. typical junction capacitance vs. reverse voltage typical performance curves (continued) t c = +175 o c i f , forward current - (a) t, recovery times - (ns) 75 0 500 10 1 400 300 200 100 t rr t b t a 75 15 0 25 50 100 150 175 125 30 45 60 t c , case temperature - ( o c) i f (av), average forward current - (a) 75 sq. wave dc v r , reverse voltage (v) 100 500 0 200 0 50 100 150 200 400 300 c j , junction capacitance (pf) 600 700 800
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a figure 10. avalanche energy test circuit figure 11. avalanche current and voltage wave- forms 12v q 2 q 1 12v 130 ? dut current sense + l r 1m ? v dd 130 ? i max = 1a l = 40mh r < 0.1 ? e avl = 1/2li 2 [v avl /(v avl - v dd )] q 1 and q 2 are 1000v mosfets - v dd iv t 0 t 1 t 2 i l v avl t i l
?001 fairchild semiconductor corporation rhru7570, rhru7580, RHRU7590, rhru75100 rev. a rhru7570, rhru7580, RHRU7590, rhru75100 packaging (continued) 15 o a c d e l l 2 p l 3 b a 1 q l1 j 1 h 1 term. 2 term. 1 r q to-218 single lead jedec style to-218 plastic package symbol inches millimeters notes min max min max a 0.185 0.195 4.70 4.95 - a 1 0.058 0.062 1.48 1.57 - b 0.433 0.443 11.00 11.25 - c 0.018 0.022 0.46 0.55 - d 0.800 0.820 20.32 20.82 - e 0.615 0.625 15.63 15.87 2 h 1 - 0.330 - 8.38 - j 1 0.115 0.125 2.93 3.17 4 l 0.635 0.655 16.13 16.63 - l 1 - 0.130 - 3.30 - l 2 - 0.034 - 0.86 - l 3 0.195 0.205 4.96 5.20 - p 0.159 0.163 4.04 4.14 - q 0.176 0.186 4.48 4.72 2 q 1.080 1.088 27.44 27.63 - r 0.078 0.082 1.99 2.08 - notes: 1. no current jedec outline for this package. 2. tab outline optional within boundaries of dimensions e and q. 3. maximum radius of 0.050 inches (1.27mm) on all body edges and corners. 4. position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension d. 5. controlling dimension: inch. 6. revision 1 dated 1-93.
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. pacman? pop? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? star* power? stealth? fast fastr? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? rev. h ? acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? ultrafet? vcx? ? ?
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