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1 n- and p-channel 30 v (d-s) mosfet feature s ? halogen-free ac cording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g test ed ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc con verter ? load switch product s um mary v ds (v) r ds(on) ( : )i d (a ) a q g (t yp.) n-channel 30 0.018 at v gs = 10 v 7.0 2.75 0.024 at v gs = 4.5 v 5.2 p-channel - 30 0.036 at v gs = - 10 v - 6.9 4.1 0.040 at v gs = - 4.5 v - 5.4 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op view 2 3 4 1 n-channel mosfet d 1 g 1 s 1 s 2 g 2 d 2 p-channel mosfet notes: a. based on t c = 25 c. b. surfa ce mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 120 c/w (n-channel) and 110 c/w (p-c hannel). absolute maximum ratings (t a = 25 c, unless otherwise noted) p aramet e r s ymbol n-channel p-channel unit drain-source voltage v ds 30 - 30 v gate -source v oltage v gs 2 0 continuous d rain current (t j = 150 c) t c = 25 c i d 7.0 - 6.9 a t c = 70 c 4.9 - 4.4 t a = 25 c 5.9 b, c - 5.4 b, c t a = 70 c 3.9 b, c - 3.7 b, c pulsed dr ai n current (10 s pulse width) i dm 24 - 15 source-drain curre nt diode current t c = 25 c i s 2.3 - 2.3 t a = 25 c 1.5 b, c - 1.5 b, c pulsed source-dr ain current i sm 24 - 12 single pulse av alanche current l = 0.1 mh i as 78 single pulse a valanche energy e as 2.5 3.2 mj maxi m um power dissipation t c = 25 c p d 2.78 2.78 w t c = 70 c 1.78 1.78 t a = 25 c 1.78 b, c 1.78 b, c t a = 70 c 1.14 b, c 1.14 b, c ope rating junction and storage temperature range t j , t st g - 55 to 1 50 c thermal resist ance rat i ngs p a rameter symbol n- cha nnel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, d t d 10 s r thja 57 70 57 70 c/w maximum junction-to-foot (drain) steady state r thjf 37 45 37 45 zzzglqwhnms '7 0 %'<
2 specif ications (t j = 2 5 c, unless otherwise noted) pa ram e ter symb ol test conditions min. typ. a max. u n it static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a n- ch 30 v v gs = 0 v, i d = - 250 a p-ch - 30 v ds temper ature coefficient ? ? ? ? ? ? ???? ? ?
3 notes: a. guara nteed by design, n ot subject to production testing. b. pulse test; pulse width ? 300 s, duty cycle ? 2 % . stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) pa ra mete r sy mbol test conditions min. typ. a max. un it dyna mic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 15 v , r l = 15 ? i d ? 1 a, v gen = 10 v, r g = 1 ? p-channel v dd = - 15 v, r l = 15 ? i d ? - 1 a, v gen = - 10 v, r g = 1 ? n-ch 7 1 1 ns p-ch 5.5 10 rise time t r n-ch 12 18 p-ch 13 25 turn-off delay time t d(off) n-ch 14 25 p-ch 17 30 fall time t f n-ch 6 1 0 p-ch 7.7 15 tu r n - o n d e l ay t i m e t d(on) n-c hannel v dd = 15 v , r l = 15 ? i d ? 1 a, v gen = 4.5 v, r g = 1 ? p-channel v dd = - 15 v, r l = 15 ? i d ? - 1 a, v gen = - 4.5 v , r g = 1 ? n-ch 16 30 p-ch 40 60 rise time t r n-ch 16 30 p-ch 40 60 turn-off delay time t d(off) n-ch 9 1 8 p-ch 20 40 fall time t f n-ch 9 1 8 p-ch 17 30 drain- sou rce body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 4 .3 a p-ch - 4.3 pulse diode forward current a i sm n-ch 24 p-ch - 12 body dio de v oltage v sd i s = 1.25 a n-ch 0.8 1 .2 v i s = - 0.75 a p-ch - 0.8 - 1.2 body diode reverse recovery time t rr n-c hannel i f = 1.25 a, di/dt = 100 a/s , t j = 25 c p-channel i f = - 2.5 a, di/dt = - 100 a/s, t j = 25 c n-ch 14 21 ns p-ch 17 30 body diode reverse recovery charge q rr n-ch 6 1 0 nc p-ch 11 20 reverse recovery fall time t a n-ch 9 ns p-ch 12 re v erse recovery rise time t b n-ch 5 p-ch 5 www.din-tek.jp dt m4 606 bdy
4 n-chan nel typic al characteristics (25 c, unless otherwise noted) output ch aracteristics on-resistance vs. drain current and gate voltage gate charge 0 6 12 1 8 24 0246 8 10 v gs =10 v thr u 6 v v gs =4 v v gs =5 v v ds - drain - to-so u rce v oltage ( v ) - drain c u rrent (a) i d - on- r esistance ( ? ) r ds(on) 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 12 14 16 i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 02 46 i d =2. 5 a v ds =2 2 . 5 v v ds =7. 5 v v ds =15 v - gate- t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs transfer characteristics capa citance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 012 3 45 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds - dr ain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d =6a v gs =4. 5 v v gs =10 v t j -j u nction t emperat u re (c) ( n ormalized) - on - r esistance r ds(on) www.din-tek.jp dt m4 606 bdy
5 n- c hannel typical characteristics (25 c, unless otherwise noted) source-drain diod e fo rward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 10 0.1 v sd - source-to-drain voltage (v) - source current (a) i s 1 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ar iance (v) v gs(th) t j - t emperature (c) on-resistance vs. gate-to-source vo ltag e single pulse power, junction-to-ambient 0.00 0.05 0.10 0.15 0.20 0.25 012 345 67 8 91 0 t j =25 c t j = 125 c - on- r esistance (
6 n-chan nel typic al characteristics (25 c, unless otherwise noted) * t he power dissipation p d is b a sed on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 package limited t c - case t emperat u re (c) i d - drain c u rrent (a) pow e r derating, junction-to-foot 0.0 0.7 1.4 2.1 2. 8 3.5 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r d erating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w ) www.din-tek.jp dt m4 606 bdy
7 n- c hannel typical characteristics (25 c, unless otherwise noted) n o rma lized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 120 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa ce mo u nted d u ty c ycle = 0.5 single p u lse 0.02 0.05 nor m alized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m4 606 bdy
8 p-ch annel ty pical characteristics (25 c, unless otherwise noted) output ch aracteristics on-resistance vs. drain current and gate voltage gate charge v ds - drain- to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =5 v 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 v gs =1 0 v thr u 6 v v gs =4 v v gs =3 v - on- r esistance ( ) r ds(on) i d - drain c u rrent (a) 0.00 0.05 0.10 0.15 0.20 0 3 6 9 12 15 v gs =10 v v gs =4. 5 v i d =2. 5 a 0 2 4 6 8 10 024 6 8 - gate- t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs v ds =22 . 5 v v ds =7. 5 v v ds =1 5 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c 0 150 300 450 600 0 6 12 1 8 24 30 c iss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) c oss c rss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction t emperat u re (c) ( n ormalized) - on - r esistance r ds(o n ) v gs =10 v v gs =4. 5 v i d =3. 2 a www.din-tek.jp dt m4 606 bdy
9 p-channel typical characteristics (25 c, unless otherwise noted) source-drain diod e fo rward voltage threshold voltage 0.0 0 .3 0.6 0.9 1.2 1.5 10 v sd -so u rce -to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.1 1 0.01 t j = 150 c 0.001 t j = - 50 c t j = 25 c -0. 4 -0 .2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(t h) t j - t emperat u re (c) i d =1ma on-res istan ce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.1 0.2 0.3 0.4 024 6 8 10 - on- r esistance ( ) r ds(o n ) v gs - g ate -to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 3.5 a 0 10 20 30 40 50 01 1 100.0 0.01 ti m e (s) po w er ( w ) 0.1 sa fe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 m s 100 s, dc 10 s v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d 1s 10 s zzzglqwhnms '7 0 %'<
10 p-ch annel ty pical characteristics (25 c, unless otherwise noted) * t he power dissipation p d is b a sed on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 3 4 5 6 7 0 2 55 075100125150 t c - case t emperat u re (c) i d - drain c u rrent (a) po w e r derating, junction-to-foot 0.0 0.7 1.4 2.1 2. 8 3.5 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r d erating, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m4 606 bdy
11 p-channel typical characteristics (25 c, unless otherwise noted) n o rma lized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rf ace mo u nted d u ty c y cle = 0.5 single p u lse 0.02 0.05 nor m alized thermal transient impedance, junction-to-foot 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m4 606 bdy
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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