^e-mi-dondilctoi \j^ioaacti, ona. 20 stern ave. springfield, new jersey 07081 u.s.a. ? n channel ? enhancement mode ? avalanche-rated telephone: (973) 376-2922 (212)227-6005 buz 72a pin1 pin 2 d pin 3 type buz 72 a yds 100v fc 9a rds(on) 0.25 q package to-220 ab maximum ratings parameter continuous drain current 7-c = 25 'c pulsed drain current tc = 25 c avalanche current, limited by 7]max avalanche energy,periodic limited by tjmax avalanche energy, single pulse /d = 10a, vdo = 25 v, rqs = 25 q l = 885 uh, 7] = 25 c gate source voltage power dissipation rc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id 'dpuls /ar ar as vgs plot 1 tstg rthjc rthja values 9 36 10 7.9 59 20 40 -55... + 150 -55... + 150 <3.1 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics, at 7] = 25c, unless otherwise specified buz 72a parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 "c gate threshold voltage vgs=vds,id= 1 ma zero gate voltage drain current vds = 100 v, vgs = 0 v, 7] = 25 c vds = 10 v- ^gs = v> t\ 125 c gate-source leakage current vqq = 20 v, vds = 0 v drain-source on-resistance l/gs = 10v, /d = 6a ^(brjdss ^gs^h) 'dss 'gss rds(on) 100 2.1 , - - - - 3 0.1 10 10 0.2 - 4 1 100 100 0.25 v ma na a
electrical characteristics, at tj = 25 c, unless otherwise specified buz 72a parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds- 2 * /d ? %s(on)max, 'd = 6 a input capacitance vgs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v, vds = 25 v. f= 1 mhz reverse transfer capacitance vgs = o v, vd$ = 25 v, f= 1 mhz turn-on delay time vdd = 30v, vgs = 10v, /d = 3a rgs = 50 q rise time \/dd = 30v, vgs = 10v, /d = 3a rgs = 50 q turn-off delay time l/dd = 30v, l/gs = 10v, /d = 3a rgs = 50 a fall time l/dd = 30v, l/gs = 10v, /d = 3a rgs = 50 q fife qss /^ uoss qss fd(on) 'r fd(off) ff 3 - - - - - - - 4.3 400 120 70 10 45 55 40 - 530 180 105 15 70 75 55 s pf ns
buz 72a electrical characteristics, at tj = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current.pulsed tc = 25 c inverse diode forward voltage vgs = 0 v, if = 20 a reverse recovery time i/r = 30 v, /f=/s| d/f/df = 100 a/us reverse recovery charge i/r = 30 v, /f=/s d/f/df = 100 a/us is 'sm ^sd |
