quadrant photodiode 5 mm 2 SXUVPS4C features to-5, 5 pin header windowless package electro-optical characteristics at 25c (per element) parameters test conditions min typ max units active area responsivity, r dark current, idr reverse breakdown voltage, v r capacitance, c response time shunt resistance thermal parameters storage and operating temperature range ambient nitrogen or vacuum maximum junction temperature lead soldering temperature 1 -10 to 40c -20c to 80c 70c 260c 1 0.080" from case for 10 seconds. dimensions are in inch [metric] units. per quadrant @ 254nm v r = 18v i r = 1a v r = 0v v r = 0v v f = 10mv 20 100 5 0.02 1 1 100 500 mm 2 a/w na volts pf usec mohms revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
0.35 responsivity (a/w) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 wavelength (nm) 1000 photon responsivity quadrant photodiode 5 mm 2 SXUVPS4C revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
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