DMP2066LSN new product p-channel enhancem ent mode mosfet features ? low r ds(on) : ? 40 m @v gs = -4.5v ? 70 m @v gs = -2.5v ? low input/output leakage ? lead free by design/rohs compliant (note 3) ? qualified to aec-q101 standards for high reliability ? "green" device (note 4) mechanical data ? case: sc-59 ? case material ? molded plasti c. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish - matte tin solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 1) continuous t a = 25c t a = 70c i d -4.6 -3.7 a pulsed drain current (note 2) i dm -18 a body-diode continuous current (note 1) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.25 w thermal resistance, junction to ambient (note 1); steady-state r ja 100 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on 1"x1", fr-4 pc board with 2 oz. copper and test pulse width t 10s. 2. repetitive rating, pulse widt h limited by junction temperature. 3. no purposefully added lead. sc-59 top view pin confi g uration source gate drain internal schematic d g s product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition static parameters drain-source breakdown voltage bv dss -20 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current t j = 25 c i dss ? ? -1 a v ds = -20v, v gs = 0v gate-body leakage current i gss ? ? 100 na v ds = 0v, v gs = 12v gate threshold voltage v gs ( th ) -0.6 -0.96 -1.2 v v ds = v gs , i d = -250 a on state drain current (note 5) i d ( on ) -15 ? ? a v gs = -4.5v, v ds = -5v static drain-source on-resistance (note 5) r ds (on) ? 29 55 40 70 m v gs = -4.5v, i d = -4.6a v gs = -2.5v, i d = -3.8a forward transconductance (note 5) g fs ? 9 ? s v ds = -10v, i d = -4.5a diode forward voltage (note 5) v sd -0.5 -0.72 -1.4 v i s = -2.1a, v gs = 0v maximum body-diode continuous current (note 1) i s ? ? 1.7 a ? dynamic parameters (note 6) input capacitance c iss ? 820 ? pf v ds = -15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 200 ? pf reverse transfer capacitance c rss ? 160 ? pf gate resistance r g ? 2.5 ? v ds = 0v, v gs = 0v f = 1.0mhz switching characteristics total gate charge q g ? 10.1 ? nc v ds = -10v, v gs = -4.5v, i d = -4.5a gate-source charge q gs ? 1.5 ? gate-drain charge q gd ? 4.3 ? turn-on delay time t d ( on ) ? 4.4 ? ns v ds = -10v, v gs = -4.5v, i d = -1a, r g = 6.0 rise time t r ? 9.9 ? turn-off delay time t d ( off ) ? 28.0 ? fall time t f ? 23.4 ? notes: 4. test pulse width t = 300 s. 5. guaranteed by design. not subject to production testing. DMP2066LSN product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
