sop8 plastic-encapsulate mosfets CJQ4459 p-channel mosfet description the CJQ4459 combines advanced tr ench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -6.5 a pulsed drain current (note 1) i dm -30 a power dissipation (note 2) p d 1.25 w thermal resistance from junction to ambient (t 10s ) (note 3) r ja 100 /w avalanche current (note 1) i ar, i as 17 a repetitive energy l=0.1mh (note 1) e ar, e as 14 mj junction temperature t j 150 storage temperature t stg -55~ 150 sop8 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-30v,v gs = 0v -1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage (note 4) v gs(th) v ds =v gs , i d =-250a -1.4 -2.4 v v gs =-10v, i d =-6.5a 46 m ? drain-source on-resistance (note 4) r ds(on) v gs =-4.5v, i d =-5a 72 m ? forward tranconductance (note 4) g fs v ds =-5v, i d =-6.5a 6 s diode forward voltage (note 4) v sd i s =-1a, v gs = 0v -1 v dynamic parameters (note 5) input capacitance c iss 415 625 pf output capacitance c oss 70 130 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 40 90 pf switching parameters (note 5) turn-on delay time t d(on) 7.5 ns turn-on rise time t r 5.5 ns turn-off delay time t d(off) 19 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =2.5 ? ,r gen =3 ? 7 ns total gate charge (10v) 7.4 11 nc total gate charge (4.5v) q g 3.7 6 nc gate-source charge q gs 1.3 1.9 nc gate-drain charge q gd v ds =-15v,v gs =-10v,i d =-6.5a 1.3 3.1 nc notes : 1. repetitive rating : pulse width limited by junction temperature t j(max) =150 . ratings are based on low frequency and duty cycles to keep initial t j =25 . 2. the power dissipation p d is based on t j(max) =150 , using 10s junction-to-ambient thermal resistance. 3. the value in any given application dep ends on the user?s specific board design. 4. pulse test : pulse width 300s, duty cycle 0.5%. 5. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0 -1 -2 -3 -4 -5 -6 -0 -4 -8 -12 -16 -20 -24 -2 -4 -6 -8 -10 20 40 60 80 100 -4 -8 -12 -16 -20 0 20 40 60 80 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 25 50 75 100 125 -1.8 -1.9 -2.0 -2.1 -6.0v -8.0v -4.5v -4.0v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =-3.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d = -6.5a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs = -10v v gs = -4.5v on-resistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) output characteristics CJQ4459 drain current i d (a) gate to source voltage v gs (v) v ds = -5v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? threshold voltage v th (v) ambient temperature t a ( ) i d = -250ua threshold voltage 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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