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  please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM6L35FE high-speed switching applications analog switch applications ? n-ch: 1.2-v drive p-ch: 1.2-v drive ? n-ch, p-ch, 2-in-1 ? low on-resistance q1 n-ch: r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) q2 p-ch: r on = 44 ? (max) (@v gs = -1.2 v) : r on = 22 ? (max) (@v gs = -1.5 v) : r on = 11 ? (max) (@v gs = -2.5 v) : r on = 8 ? (max) (@v gs = -4.0 v) q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d 180 drain current pulse i dp 360 ma q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain?source voltage v dss -20 v gate?source voltage v gss 10 v dc i d -100 drain current pulse i dp -200 ma absolute maximum ratings (ta = 25 c) (common to the q1, q2) characteristic symbol rating unit drain power dissipation p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the appl ication of high temperatur e/current/voltage and the significant change in temperature, etc.) may cause this pr oduct to decrease in the reliability significantly even if the operating conditions (i.e. operati ng temperature/current/voltage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) unit: mm 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 0.120.05 0.550.05 weight: 3.0 mg (typ.) 1.source1 4.source2 2.gate1 5.gate2 3.drain2 6.drain1 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0v ? ? 10 a drain?source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0v 20 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 50 ma (note 2) 115 ? ? ms i d = 50 ma, v gs = 4 v (note 2) ? 1.5 3 i d = 50 ma, v gs = 2.5 v (note 2) ? 2 4 i d = 5 ma, v gs = 1.5 v (note 2) ? 3 8 drain?source on-resistance r ds (on) i d = 5 ma, v gs = 1.2 v (note 2) ? 5 20 input capacitance c iss ? 9.5 ? reverse transfer capacitance c rss ? 4.1 ? output capacitance c oss v ds = 3 v, v gs = 0v, f = 1 mhz ? 9.5 ? pf turn-on time t on ? 115 ? switching time turn-off time t off v dd = 3 v, i d = 50 ma, v gs = 0 to 2.5 v ? 300 ? ns drain?source forward voltage v dsf i d = - 180 ma, v gs = 0v (note 2) ? -0.9 -1.2 v q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 10 a drain?source breakdown voltage v (br) dss i d = -0.1 ma, v gs = 0 v -20 ? ? v drain cutoff current i dss v ds = -20 v, v gs = 0 v ? ? -1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.4 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -50 ma (note 2) 77 ? ? ms i d = -50 ma, v gs = -4 v (note 2) ? 4.3 8 i d = -50 ma, v gs = -2.5 v (note 2) ? 5.6 11 i d = -5 ma, v gs = -1.5 v (note 2) ? 8.2 22 drain?source on-resistance r ds (on) i d = -2 ma, v gs = -1.2 v (note 2) ? 11 44 input capacitance c iss ? 12.2 ? reverse transfer capacitance c rss ? 6.5 ? output capacitance c oss v ds = -3 v, v gs = 0 v, f = 1 mhz ? 10.4 ? pf turn-on time t on ? 175 ? switching time turn-off time t off v dd = -3 v, i d = -50 ma, v gs = 0 to -2.5 v ? 251 ? ns drain?source forward voltage v dsf i d = 100 ma, v gs = 0 v (note 2) ? 0.83 1.2 v note 2: pulse test marking equivalent circuit (top view) ll3 6 5 4 1 2 3 654 123 q1 q2 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM6L35FE product specification


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Newark

Part # Manufacturer Description Price BuyNow  Qty.
SSM6L35FE,LM(T
83AK2806
Toshiba America Electronic Components Mosfet, N/P-Ch, 20V, 0.18A, Sot-563 Rohs Compliant: Yes |Toshiba SSM6L35FE, LM(T 40000: USD0.041
24000: USD0.047
16000: USD0.05
8000: USD0.058
4000: USD0.071
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0
SSM6L35FE,LM(T
01AM0635
Toshiba America Electronic Components Mosfet, N/P-Ch, 20V, 0.18A, Sot-563 Rohs Compliant: Yes |Toshiba SSM6L35FE, LM(T 500: USD0.094
250: USD0.112
100: USD0.139
50: USD0.167
25: USD0.202
10: USD0.295
1: USD0.385
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DigiKey

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SSM6L35FE,LM
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Toshiba America Electronic Components MOSFET N/P-CH 20V 0.18A/0.1A ES6 200000: USD0.04516
100000: USD0.04586
28000: USD0.05539
12000: USD0.05645
8000: USD0.06527
4000: USD0.06827
2000: USD0.06827
1000: USD0.08114
500: USD0.10936
100: USD0.1341
10: USD0.265
1: USD0.38
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Avnet Americas

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SSM6L35FELM
SSM6L35FE,LM
Toshiba America Electronic Components Trans MOSFET N/P 20V 0.18A/0.1A 6-Pin SOT-563 - Tape and Reel (Alt: SSM6L35FE,LM) 400000: USD0.04608
40000: USD0.04716
32000: USD0.0486
24000: USD0.04968
16000: USD0.05112
8000: USD0.05364
4000: USD0.05508
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Mouser Electronics

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SSM6L35FE,LM
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Toshiba America Electronic Components MOSFET Small Signal MOSFET 1: USD0.38
10: USD0.264
100: USD0.11
1000: USD0.069
4000: USD0.068
8000: USD0.056
24000: USD0.054
48000: USD0.048
100000: USD0.045
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Arrow Electronics

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SSM6L35FE,LM
V72:2272_13898029
Toshiba America Electronic Components Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin ES T/R 1000: USD0.0615
500: USD0.1025
250: USD0.1039
100: USD0.105
25: USD0.2454
10: USD0.2474
1: USD0.3496
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Verical

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SSM6L35FE,LM(T
71240882
Toshiba America Electronic Components Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin ES T/R 2000: USD0.114
1000: USD0.1223
500: USD0.1288
209: USD0.15
196: USD0.1638
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SSM6L35FE,LM(B
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Toshiba America Electronic Components SSM6L35FE,LM(B 2500: USD0.2128
1000: USD0.2192
500: USD0.2266
334: USD0.2351
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SSM6L35FE,LM
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Toshiba America Electronic Components Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin ES T/R 1000: USD0.0615
500: USD0.1025
250: USD0.1039
128: USD0.105
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Quest Components

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Toshiba America Electronic Components 8: USD0.35
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Toshiba America Electronic Components 728: USD0.22
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Chip1Stop

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SSM6L35FE,LM(T
C1S751201032991
Toshiba America Electronic Components MOSFET 2000: USD0.0889
1000: USD0.0954
500: USD0.1
200: USD0.117
100: USD0.128
50: USD0.138
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CHIPMALL.COM LIMITED

Part # Manufacturer Description Price BuyNow  Qty.
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Toshiba America Electronic Components 110: USD0.21096
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EBV Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
SSM6L35FE,LM(T
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Toshiba America Electronic Components Transistor MOSFET Array N/P-CH 20V 180mA/100mA 6-Pin SOT-563 (Alt: SSM6L35FE,LM(T) BuyNow
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New Advantage Corporation

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Toshiba America Electronic Components 4000: USD0.0855
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