AON2809 12v dual p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -2a r ds(on) (at v gs =-4.5v) < 68m w r ds(on) (at v gs =-2.5v) < 90m w r ds(on) (at v gs =-1.8v) < 118m w typical esd protection hbm class 2 symbol the AON2809 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. units parameter absolute maximum ratings t a =25c unless otherwise noted maximum -12v s1 g1 d1 s2 g2 d2 dfn 2x2a top view bottom view pin 1 pin 1 s1 g1 d2 d1 d1 d2 s2 g2 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state c/w maximum junction-to-ambient a d 100 maximum junction-to-ambient a c/w r q ja 50 80 60 v units parameter maximum v gate-source voltage drain-source voltage -12 8 continuous drain current g t a =25c junction and storage temperature range power dissipation b p d t a =70c t a =25c t a =70c 1.3 -55 to 150 pulsed drain current c units parameter typ max c thermal characteristics a w -8 2.1 i d -2 -1.6 rev 0: nov. 2012 www.aosmd.com page 1 of 5 free datasheet http:///
AON2809 symbol min typ max units bv dss -12 v v ds =-12v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v i d(on) -8 a 55 68 t j =125c 72 89 70 90 m w 90 118 m w g fs 8 s v sd -0.7 -1 v i s -1.5 a c iss 415 pf c oss 115 pf c rss 78 pf r g 26 w q g (4.5) 4.4 nc q gs 0.8 nc q gd 0.9 nc t d(on) 11.8 ns t 24.5 ns drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-2a forward transconductance diode forward voltage switching parameters i s =-1a,v gs =0v v ds =-5v, i d =-2a gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance v gs =0v, v ds =-6v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs = 6v zero gate voltage drain current gate-body leakage current m w v gs =-1.8v, i d =-1a v gs =-2.5v, i d =-1a maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-6v, r =3 w , v gs =-4.5v, v ds =-6v, i d =-2a gate source charge gate drain charge total gate charge t r 24.5 ns t d(off) 54.5 ns t f 37.3 ns t rr 21 ns q rr 5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-2a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-6v, r l =3 w , r gen =3 w turn-off fall time i f =-2a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on r q ja t 10s and the maxminum maximum allowed junction tem perature of 150 c. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. rev0: nov. 2012 www.aosmd.com page 2 of 5 free datasheet http:///
AON2809 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-2v -2.5v -4.5v -10v 0 4 8 12 16 20 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 20 40 60 80 100 120 140 0 2 4 6 r ds(on) (m w ww w ) -i d (a) figure 3: on - resistance vs. drain current and gate v gs =-2.5v v gs =-4.5v v gs =-1.8v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-4.5v i d =-2a v gs =-1.8v i d =-1a v gs =-2.5v i d =-1a figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 0 20 40 60 80 100 120 140 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-2a 25 c 125 c 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c rev0: nov. 2012 www.aosmd.com page 3 of 5 free datasheet http:///
AON2809 typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =-6v i d =-2a 0 100 200 300 400 500 600 700 0 3 6 9 12 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0 50 100 150 200 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t a =25 c 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 10ms 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =100 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d figure 10: single pulse power rating junction - to - ambient (note e) figure 9: maximum forward biased safe operating area (note e) rev0: nov. 2012 www.aosmd.com page 4 of 5 free datasheet http:///
AON2809 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v dut l vgs diode recovery test circuit & waveforms vds - vds + rr q = - idt t rr -isd -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) ig vgs - + vdc l isd vds - di/dt rm vdd vdd t rr -isd -vds f -i -i rev0: nov. 2012 www.aosmd.com page 5 of 5 free datasheet http:///
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