n-channel logic level powertrench ? mosfet 60v, 1.6a, 98 m ? features ? r ds(on) = 98m ? at v gs = 4.5v, i d = 1.6a ? r ds(on) = 82m ? at v gs = 10v, i d = 1.7a ? typ q g(tot) = 9.2nc at v gs = 10v ? low miller charge ? qualified to aec q101 applications ? dc/dc converter ? motor drives ? rohs compliant product specification fdn5632n_f085 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v) 1.7 a pulsed 10 p d power dissipation 1.1 w t j , t stg operating and storage temperature -55 to +150 o c r jc thermal resistance junction to case 75 o c/w r ja thermal resistance junction to ambient to-252, 1in 2 copper pad area 111 o c/w package marking and ordering information device marking device package reel size tape width quantity 5632 fdn5632n_f085 ssot3 7? 8mm 3000 units electrical characteristics t a = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v i dss zero gate voltage drain current v ds = 48v, - - 1 a v gs = 0v t a = 125 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a12.03v r ds(on) drain to source on resistance i d = 1.7a, v gs = 10v - 57 82 m ? i d = 1.6a, v gs = 6v - 62 88 i d = 1.6a, v gs = 4.5v 70 98 i d = 1.7a, v gs = 10v, t a = 150 o c -107135 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 475 - pf c oss output capacitance - 60 - pf c rss reverse transfer capacitance - 30 - pf r g gate resistance f = 1mhz - 1.4 - ? q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 1.7a - 9.2 12 nc q gs gate to source gate charge -1.5-nc q gd gate to drain ?miller? charge - 1.4 - nc 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification fdn5632n_f085
electrical characteristics t a = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t on turn-on time v dd = 30v, i d = 1.0a v gs = 10v, r gen = 6 ? - - 30 ns t d(on) turn-on delay time - 15 - ns t r rise time - 1.7 - ns t d(off) turn-off delay time - 5.2 - ns t f fall time - 1.3 - ns t off turn-off time - - 12.9 ns v sd source to drain diode voltage i sd = 1.7a - 0.8 1.25 v i sd = 0.85a - 0.8 1.0 t rr reverse recovery time i sd = 1.7a, di sd /dt = 100a/ s - 16.0 21 ns q rr reverse recovery charge - 7.9 10.3 nc 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification fdn5632n_f085
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