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  march 2011 doc id 17078 rev 2 1/22 22 stb18n55m5, STD18N55M5 stf18n55m5, stp18n55m5 n-channel 550 v, 0.18 , 13 a, mdmesh? v power mosfet in d2pak, dpak, to-220fp and to-220 features dpak worldwide best r ds(on) higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description the devices are n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @t jmax r ds(on) max i d stb18n55m5 STD18N55M5 stf18n55m5 stp18n55m5 550 v < 0.24 13 a dpak 1 3 1 2 3 to-220 1 2 3 to-220fp 1 3 d2pak !-v $ ' 3 table 1. device summary order codes marking package packaging stb18n55m5 18n55m5 d2pak tape and reel std18n55m dpak stf18n55m5 to-220fp tu b e stp18n55m5 to-220 www.st.com
contents stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 2/22 doc id 17078 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 electrical ratings doc id 17078 rev 2 3/22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, dpak, d2pak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 13 13 (1) 1. limited only by maximu m temperature allowed. a i d drain current (continuous) at t c = 100 c 8.3 8.3 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 52 52 (1) a p tot total dissipation at t c = 25 c 90 25 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 200 mj dv/dt (3) 3. i sd 13 a, di/dt 400 a/s, v peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 50 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak d2pak to-220 to-220fp r thj-case thermal resistance junction-case max 1.39 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb thermal resistance junction-pcb max 50 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 4/22 doc id 17078 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6.5 a 0.18 0.24 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1352 38 3.7 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 440 v -98-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -35-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.7 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 440 v, i d = 6.5 a, v gs = 10 v (see figure 19 ) - 31 6.3 14 - nc nc nc
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 electrical characteristics doc id 17078 rev 2 5/22 table 6. switching times symbol parameter test conditions min. typ. max unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 400 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 18 , figure 23 ) - 29 9.5 23 13 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 13 52 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 13 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a, di/dt = 100 a/s v dd = 100 v (see figure 20 ) - 238 2.8 23.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 13 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 20 ) - 278 3.3 24 ns c a
electrical characteristics stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 6/22 doc id 17078 rev 2 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 661v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 662v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 66 3 v1
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 electrical characteristics doc id 17078 rev 2 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) (a) 5 15 20 6.5v 7v 7.5v v g s =10v 6v 5.5v 5v am0 8 664v1 i d 15 10 5 0 3 5 v g s (v) 8 (a) 4 6 9 20 7 v d s =20v am0 8 665v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =440v i d =6.5a 25 12 3 00 200 100 0 400 v d s v g s 3 0 3 5 150 50 250 3 50 450 am0 8 666v1 r d s (on) 0.16 0.14 0.12 0.10 0 4 i d (a) ( ) 2 6 0.1 8 0.20 0.22 v g s =10v 8 10 12 am0 8 667v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 8 66 8 v1 e o ss 1.5 1.0 0.5 0 0 100 v d s (v) ( j) 400 2.0 200 3 00 2.5 3 .0 500 3 .5 4.0 am0 8 669v1
electrical characteristics stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 8/22 doc id 17078 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. switching losses vs gate resistance (1) figure 17. normalized b vdss vs temperature 1. eon including reverse re covery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 8 670v1 r d s (on) 1. 3 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d =6.5a v g s =10v 1.1 0.9 2.1 1.5 1.9 1.7 am0 8 671v1 e 60 40 20 0 0 20 r g ( ) ( j) 10 3 0 8 0 100 120 40 i d =9a v cl =400v eon eoff v g s =10v 140 am0 8 67 3 v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d =1ma am0 8 672v1
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 test circuits doc id 17078 rev 2 9/22 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefor m figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 10/22 doc id 17078 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 package mechanical data doc id 17078 rev 2 11/22 figure 24. to-220fp drawing table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 12/22 doc id 17078 rev 2 figure 25. dpak footprint (a) table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8 a. all dimension ar e in millimeters 6.7 6.7 33 1.6 1.6 2. 3 2. 3 am0 88 50v1
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 package mechanical data doc id 17078 rev 2 13/22 figure 26. dpak (to-252) drawing 006 8 772_g
package mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 14/22 doc id 17078 rev 2 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 package mechanical data doc id 17078 rev 2 15/22 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 16/22 doc id 17078 rev 2 table 11. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 package mechanical data doc id 17078 rev 2 17/22 figure 28. d2pak (to-263) drawing figure 29. d2pak footprint (b) b. all dimension ar e in millimeters 0079457_p 16.90 10. 3 0 8 .90 3 .70 5.0 8 1. 3 0 footprint
packaging mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 18/22 doc id 17078 rev 2 5 packaging mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty. 1000 p2 1.9 2.1 bulk qty. 1000 r50 t 0.25 0.35 w 23.7 24.3
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 packaging mechanical data doc id 17078 rev 2 19/22 table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 20/22 doc id 17078 rev 2 figure 30. tape for dpak and d2pak figure 31. reel for dpak and d2pak p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 a d b f u ll r a di us t a pe s lot in core for t a pe s t a rt g me asu red at h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t am0 88 51v1
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 revision history doc id 17078 rev 2 21/22 6 revision history table 14. document revision history date revision changes 09-feb-2010 1 first release. 04-mar-2011 2 ? document status promoted from preliminary data to datasheet; ? added new package, mechanical data: d2pak.
stb18n55m5, STD18N55M5, stf18n55m5, stp18n55m5 22/22 doc id 17078 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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Newark

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STD18N55M5
94T3339
STMicroelectronics Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STD18N55M5 500: USD2.23
250: USD2.4
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DigiKey

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STD18N55M5
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STMicroelectronics MOSFET N-CH 550V 16A DPAK 5000: USD1.3425
2500: USD1.39932
1000: USD1.48609
500: USD1.73558
100: USD1.9525
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5282

Avnet Americas

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STD18N55M5
STD18N55M5
STMicroelectronics Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD18N55M5) 10000: USD1.49823
5000: USD1.53045
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STD18N55M5
STD18N55M5
STMicroelectronics Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD18N55M5) 10000: USD1.49823
5000: USD1.53045
2500: USD1.56267
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Mouser Electronics

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STD18N55M5
511-STD18N55M5
STMicroelectronics MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS 1: USD2.96
10: USD2.48
25: USD2.34
100: USD2.01
250: USD1.9
500: USD1.78
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STMicroelectronics

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Future Electronics

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STD18N55M5
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STD18N55M5
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EBV Elektronik

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STD18N55M5
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