? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150c5 5 v v gs continuous 20 v i d25 t c = 25 c; note 1 100 a i d90 t c = 90 c, note 1 80 a i s25 t c = 25 c; note 1, 2 100 a i s90 t c = 90 c, note 1, 2 70 a i d(rms) package lead current limit 50 a e as t c = 25 c 500 mj p d t c = 25 c 150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +125 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol rms leads-to-tab, 50/60 hz, t = 1 minute 2500 v~ f c mounting force with clips 11 ... 65 / 2.4 ...11 n/lb weight 2g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = i d90 , note 3 6.1 7.7 m ? v gs(th) v ds = v gs , i d = 1 ma 2 4 v i dss v ds = v dss 10 a v gs = 0 v t j = 125 c 0.1 ma i gss v gs = 20 v dc , v ds = 0 200 na g = gate, d = drain, s = source * patent pending trench power mosfet IXUC100N055 v dss = 55 v isoplus220 tm i d25 = 100 a electrically isolated back surface r ds(on) = 7.7 m ?? ?? ? ds98760(08/03) advance technical information features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation trench mosfet - very low r ds(on) - fast switching - usable intrinsic reverse diode low drain to tab capacitance(<15pf) unclamped inductive switching (uis) rated applications automotive 42v and 12v systems - electronic switches to replace relays & fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for ac drives - dc-dc converters, e.g. 12v to 42v, etc. power supplies - dc - dc converters - solar inverters battery powered systems - choppers or inverters for motor control in hand tools - battery chargers advantages easy assembly: no screws or isolation foils required space savings high power density g d s isoplus 220 tm isolated back surface* phase-out
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions ch aracteristic values (t j = 25 c, unless otherwise specified) min. typ. max. q g(on) 100 nc q gs v gs = 10 v, v ds = 14 v, i d = 50 a 22 nc q gd 36 nc t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , 115 ns t d(off) i d = 25 a, r g = 10 ? 230 ns t f 155 ns r thjc 1 k/w r thch 0.30 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = 50 a, v gs = 0 v 0.9 1.5 v note 3 t rr i f = 75a, di/dt = -100a/ s, v ds = 30 v 80 ns note: 1. mosfet chip capability 2. intrinsic diode capability 3. pulse test, t 300 s, duty cycle d 2 % IXUC100N055 isoplus220 outline phase-out
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