1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.b 2.5v drive nch+nch mosfet us6k1 z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) space saving ?? small surface mount package (tumt6). 3) low voltage drive (2.5v drive). z applications switching z packaging specifications z inner circuit package code taping basic ordering unit (pieces) us6k1 tr 3000 type z absolute maximum ratings (ta=25 c) ?1 ?2 ?1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ?1 pw10s, duty cycle1% ?2 mounted on a ceramic board source current (body diode) 30 150 ?55 to +150 12 1.5 6 0.6 6 1.0 w / element 0.7 z thermal resistance parameter c/w / total rth(ch-a) symbol limits unit c hannel to ambient 125 c/w / elemen t 179 ? mounted on a ceramic board ? tumt6 abbreviated symbol : k01 0.2max. (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (6) (3) (4) (2) (5)
us6k1 data sheet 2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.b z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?pulsed ? 10 av gs =12v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 170 240 i d = 1.5a, v gs = 4.5v ? 180 250 m ? m ? m ? i d = 1.5a, v gs = 4.0v ? 240 340 i d = 1.5a, v gs = 2.5v 1.5 ?? sv ds = 10v, i d = 1.5a ? 80 ? pf v ds = 10v ? 13 12 ? pf v gs =0v ? 7 ? pf f=1mhz ? 9 ? ns ? 15 ? ns ? 6 ? ns ? 1.6 ? ns ? 0.5 2.2 nc ? 0.3 ? nc v gs = 4.5v ?? nc i d = 1.5a v dd 15 v i d = 0.75a v gs = 4.5v r l = 20? r g =10? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 0.6a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions
us6k1 data sheet 3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.b z electrical characteristics curves drain current : i d (a) 0.01 1 10 100 1000 0.1 1 10 switching time : t (ns) fig.1 switching characteristics ta=25c v dd =15v v gs =4.5v r g =10? pulsed tf td(off) td(on) tr total gate charge : qg (nc) 0 0.5 0 1 2 3 4 5 6 1 1.5 2 gate-source voltage : v gs (v) fig.2 dynamic input characteristics ta=25c v dd =15v i d =1.5a r g =10? pulsed gate-source voltage : v gs (v) 0.0 0.001 0.01 0.1 1 10 0.5 1.0 2.0 1.5 2.5 drain current : i d (a) fig.3 typical transfer characteristics v ds =10v pulsed ta=125c 75c 25c ?25c gate-source voltage : v gs (v) 0 0.0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 0.6 1.0 12 10 3456789 static drain-source on-state resistance : r ds (m?) fig.4 static drain-source on-state resistance vs. gate source voltage ta=25c pulsed drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) (?) fig.7 static drain-source on-state resistance vs. drain current ( ? ) v gs =4.0v pulsed ta=125c 75c 25c ?25c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) (?) fig.8 static drain-source on-state resistance vs. drain current ( ?? ) v gs =2.5v pulsed ta=125c 75c 25c ?25c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) (?) fig.9 static drain-source on-state resistance vs. drain current ( ) ta=25c pulsed v gs =2.5v v gs =4v v gs =4.5v source-drain voltage : v sd (v) 0.0 0.01 0.1 1 10 0.5 1.0 1.5 source current : i s (a) fig.5 source current vs. source-drain voltage v gs =0v pulsed ta=125c 75c 25c ?25c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) (?) fig.6 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125c 75c 25c ?25c
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