elektronische bauelemente SMS6001 440ma, 60v, r ds(on) 2 n-ch enhancement mode power mosfet 27-jan-2014 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. * = date code rohs compliant product a suffix of -c specifies halogen & lead-free descriptions the SMS6001 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent rds (on)with low gate c harge. this device is suitable for use in dc-dc conversion , load switch and level shift. mechanical data trench technology supper high density cell design excellent on resistance extremely low threshold voltage esd rating: 2kv hbm application dc-dc converter circuit load switch device marking: package information package mpq leader size sot-23 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) rating parameter symbol 10s steady state unit drain C source voltage v ds 60 v gate C source voltage v gs 20 v t a = 25c 0.5 0.44 continuous drain current 1.4 t a = 70c i d 0.4 0.35 a t a = 25c 0.69 0.53 power dissipation 1.4 t a = 70c p d 0.44 0.34 w t a = 25c 0.47 0.42 continuous drain current 2.4 t a = 70c i d 0.38 0.33 a t a = 25c 0.6 0.47 power dissipation 2.4 t a = 70c p d 0.39 0.3 w pulsed drain current 3 i dm 1 a maximum junction-to-lead r jl 260 c / w operating junction & storage temperature range t j , t stg -55~150 c sot-23 w61* top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.09 0.18 b 2.10 2.65 h 0.35 0.65 c 1.20 1.40 j 0.08 0.20 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.95 bsc. f 0.30 0.50 pin configuration (top view)
elektronische bauelemente SMS6001 440ma, 60v, r ds(on) 2 n-ch enhancement mode power mosfet 27-jan-2014 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. thermal resistance ratings electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 60 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =60v, v gs =0 gate-source leakage i gss - - 5 a v ds =0 , v gs = 20v gate-threshold voltage v gs(th) 0.8 1.3 2 v v ds =v gs, i d =250 a - 1.4 2 v gs =10v, i d =0.5a drain-source on resistance 2.3 r ds(on) - 1.7 2.6 v gs =4.5v, i d =0.2a forward transconductance g fs - 0.42 - s v ds =15v, i d = 0.25a body-drain diode ratings diode forward onCvoltage v sd - 0.9 1.5 v i s =300ma, v gs =0 dynamic characteristics input capacitance c iss - 23.37 - output capacitance c oss - 7.33 - reverse transfer capacitance c rss - 5.2 - pf v ds =25v, v gs =0, f=1mhz total gate charge q g(tot) - 1.2 - threshold gate charge q g(th) - 0.15 - gate-to-source charge q gs - 0.21 - gate-to-drain charge q gd - 0.12 - nc v dd =30v, v gs =10v, i d =0.37a turn-on delay time t d(on) - 7.6 - rise time t r - 5.1 - turn-off delay time t d(off) - 24.6 - fall time t f - 10 - ns v dd =30v, i d =0.2a, v gen =10v, r g =10 . note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board using minimum pad s ize, 1oz copper 3. pulse width<380s 4. repetitive rating, pulse width limited by juncti on temperature tj=150c. rating parameter symbol typ. max. unit t Q 10s 140 180 junction-to-ambient thermal resistance 1 steady state r ja 176 232 t Q 10s 165 205 junction-to-ambient thermal resistance 2 steady state r ja 198 261 junction-to-case thermal resistance steady state r jc 100 120 c / w
elektronische bauelemente SMS6001 440ma, 60v, r ds(on) 2 n-ch enhancement mode power mosfet 27-jan-2014 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SMS6001 440ma, 60v, r ds(on) 2 n-ch enhancement mode power mosfet 27-jan-2014 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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