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this is information on a product in full production. july 2012 doc id 022879 rev 3 1/19 19 stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 n-channel 650 v, 0.198 typ., 15 a mdmesh? v power mosfet in to-220fp, i2pak, to-220 and to-247 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d stf18n65m5 710 v < 0.22 15 a STI18N65M5 stp18n65m5 stw18n65m5 to-220 to-220fp 1 2 3 1 2 3 tab i2pak 1 2 3 to-247 1 2 3 tab ! - v $ 4 ! " ' 3 table 1. device summary order code marking package packaging stf18n65m5 18n65m5 to-220fp tu b e STI18N65M5 i2pak stp18n65m5 to-220 stw18n65m5 to-247 www.st.com
contents stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 2/19 doc id 022879 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical ratings doc id 022879 rev 3 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit i2pak to-220 to-247 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 15 15 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 9.4 9.4 (1) a i dm (1) drain current (pulsed) 60 60 (1) a p tot total dissipation at t c = 25 c 110 25 w dv/dt (2) 2. i sd 15 a, di/dt 400 a/s; v dspeak < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1.14 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 210 mj electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 4/19 doc id 022879 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 7.5 a 0.198 0.22 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1240 32 3.2 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -99-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -30-pf r g intrinsic gate resistance f = 1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 7.5 a, v gs = 10 v (see figure 20 ) - 31 8 14 - nc nc nc stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical characteristics doc id 022879 rev 3 5/19 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 9.5 a, r g = 4.7 , v gs = 10 v (see figure 21 and figure 24 ) - 36 7 9 11 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 15 60 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v (see figure 24 ) - 290 3.4 23.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 24 ) - 352 4 24 ns c a electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 6/19 doc id 022879 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for i2pak and to-220 figure 3. thermal impedance for i2pak and to-220 figure 4. safe operating area to220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area to-247 figure 7. thermal impedance to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 7v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 88 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 9v1 stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 electrical characteristics doc id 022879 rev 3 7/19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9, 10 v 3 0 3 5 am12472v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 25 9 v d s = 25 v 3 0 3 5 am124 8 6v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =7.5a 3 00 200 100 0 400 500 v d s (v) v d s 25 3 0 12 am12474v1 r d s (on) 0.19 0.1 8 0.17 0.16 0 6 i d (a) ( ) 4 8 0.2 0.21 0.22 v g s =10v 0.2 3 0.24 2 10 12 14 am12475v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am12476v1 e o ss 2 1 0 0 v d s (v) ( j) 400 3 200 4 5 600 6 am124 8 4v1 electrical characteristics stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 8/19 doc id 022879 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. drain-source diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am12471v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10v i d = 17.5 a am124 83 v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =9.5a v dd =400v eon eoff 60 v g s =10v 8 0 100 120 140 160 am124 8 5v1 stf18n65m5, STI18N65M5, stp18n65m5, stw18n65m5 test circuits doc id 022879 rev 3 9/19 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform ! - v 6 ' 3 0 7 6 $ 2 ' 2 , $ 5 4 & & 6 $ $ ! - v 6 $ $ k k k k k 6 6 i 6 6 ' - ! 8 & 0 7 ) ' # / . 3 4 n & $ 5 4 6 ' ! - v ! $ $ 5 4 3 " ' ! ! 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