FDS9926A dual n-channel 2.5v specified powertrench ? mosfet general description these n-channel 2.5v specified mosfets use fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v ? 10v). applications ? battery protection ? load switch ? power management features ? 6.5 a, 20 v. r ds(on) = 0.030 ? @ v gs = 4.5 v r ds(on) = 0.043 ? @ v gs = 2.5 v. ? optimized for use in battery protection circuits ? 10 v gss allows for wide operating voltage range ? low gate charge s2 so-8 g2 s1 g1 d2 d2 d1 d1 4 3 2 1 5 6 7 8 q1 q2 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 10 v i d drain current ? continuous (note 1a) 6.5 a ? pulsed 20 power dissipation for dual operation 2 power dissipation for single operation (note 1a) 1.6 (note 1b) 1 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity FDS9926A FDS9926A 13?? 12mm 2500 units FDS9926A product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 14 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.5 1 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 6.5 a v gs = 2.5 v, i d = 5.4 a v gs = 4.5 v, i d =6.5a, t j =125 c 0.025 0.036 0.035 0.030 0.043 0.050 ? i d(on) on?state drain current v gs = 4.5 v, v ds = 5 v 15 a g fs forward transconductance v ds = 5 v, i d = 3 a 11 s dynamic characteristics c iss input capacitance 700 pf c oss output capacitance 175 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 85 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 10 18 ns t d(off) turn?off delay time 18 29 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? 510ns q g total gate charge 7 10 nc q gs gate?source charge 1.2 nc q gd gate?drain charge v ds = 10 v, i d = 3a, v gs = 4.5 v 1.9 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2) 0.65 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDS9926A product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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