pa679tb description the pa679tb is a switching device, which can be driven directly by a 2.5 v power source. the pa679tb features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? 2.5 v drive available ? low on-state resistance n-ch r ds(on)1 = 0.57 ? max. (v gs = 4.5 v, i d = 0.30 a) r ds(on)3 = 0.88 ? max. (v gs = 2.5 v, i d = 0.15 a) p-ch r ds(on)1 = 1.45 ? max. (v gs = ? 4.5 v, i d = ? 0.20 a) r ds(on)3 = 2.98 ? max. (v gs = ? 2.5 v, i d = ? 0.15 a) ? two mos fet circuits in same size package as sc-70 ordering information part number package pa679tb sc-88 (ssp) marking: ya absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 20 / ? 20 v gate to source voltage (v ds = 0 v) v gss 12 / m 12 v drain current (dc) i d(dc) 0.35 / m 0.25 a drain current (pulse) note1 i d(pulse) 1.40 / m 1.00 a total power dissipation (2 units) note2 p t 0.2 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board of 2500 mm 2 x 1.1 mm package drawing (unit: mm) 0.2 +0.1 - 0 0.15 +0.1 - 0.05 2.1 0.1 1.25 0.1 0.65 1.3 0.7 2.0 0.2 0.9 0.1 0 to 0.1 0.65 6 1 5 2 4 3 pin connection (top view) 654 123 1. 2. 3. 4. 5. 6. source 1 gate 1 drain 2 source 2 gate 2 drain 1 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (1) n-ch part (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 20.0 v, v gs = 0 v 1.0 a gate leakage current i gss v gs = 12.0 v, v ds = 0 v 10 a gate cut-off voltage note v gs(off) v ds = 10.0 v, i d = 1.0 ma 0.50 1.00 1.50 v forward transfer admittance note | y fs |v ds = 10.0 v, i d = 0.30 a 0.25 0.75 s drain to source on-state resistance note r ds(on)1 v gs = 4.5 v, i d = 0.30 a 0.38 0.57 ? r ds(on)2 v gs = 4.0 v, i d = 0.30 a 0.41 0.60 ? r ds(on)3 v gs = 2.5 v, i d = 0.15 a 0.60 0.88 ? input capacitance c iss v ds = 10.0 v 28 pf output capacitance c oss v gs = 0 v 11 pf reverse transfer capacitance c rss f = 1.0 mhz 7 pf turn-on delay time t d(on) v dd = 10.0 v, i d = 0.30 a 20 ns rise time t r v gs = 4.0 v 51 ns turn-off delay time t d(off) r g = 10 ? 94 ns fall time t f 87 ns body diode forward voltage v f(s-d) i f = 0.35 a, v gs = 0 v 0.84 v note pulsed: pw 350 s, duty cycle 2% pa679tb product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
(2) p-ch part (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 20.0 v, v gs = 0 v ? 1.0 a gate leakage current i gss v gs = m 12.0 v, v ds = 0 v m 10 a gate cut-off voltage note v gs(off) v ds = ? 10.0 v, i d = ? 1.0 ma ? 0.80 ? 1.30 ? 1.80 v forward transfer admittance note | y fs |v ds = ? 10.0 v, i d = ? 0.20 a 0.2 0.6 s drain to source on-state resistance note r ds(on)1 v gs = ? 4.5 v, i d = ? 0.20 a 1.17 1.45 ? r ds(on)2 v gs = ? 4.0 v, i d = ? 0.20 a 1.25 1.55 ? r ds(on)3 v gs = ? 2.5 v, i d = ? 0.15 a 2.25 2.98 ? input capacitance c iss v ds = ? 10.0 v 29 pf output capacitance c oss v gs = 0 v 15 pf reverse transfer capacitance c rss f = 1.0 mhz 3 pf turn-on delay time t d(on) v dd = ? 10.0 v, i d = ? 0.20 a 23 ns rise time t r v gs = ? 4.0 v 39 ns turn-off delay time t d(off) r g = 10 ? 50 ns fall time t f 33 ns body diode forward voltage v f(s-d) i f = 0.25 a, v gs = 0 v 0.88 v note pulsed: pw 350 s, duty cycle 2% test circuit switching time pg. r g 0 v gs( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs( ? ) v ds( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% pa679tb product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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