KTC3207 transistor (npn) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : 100 ma collector-base voltage v (br)cbo : 300 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 1ma, i e =0 300 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 300 v emitter-base breakdown voltage v(br) ebo i e = 1ma, i c =0 7 v collector cut-off current i cbo v cb =240v, i e =0 1.0 a emitter cut-off current i ebo v eb = 7v, i c =0 1.0 a h fe(1) v ce = 10v, i c = 4ma 20 dc current gain h fe(2) v ce = 10v, i c = 20ma 30 150 collector-emitter saturation voltage v ce (sat) i c = 10ma, i b = 1ma 1.0 v base-emitter saturation voltage v be (sat) i c = 10ma, i b = 1ma 1.0 v transition frequency f t v ce = 10v, i c = 20ma 50 mhz collector output capacitance c ob v cb =20v, i e =0, f=1mh z 3.0 pf 1 2 3 to-92l 1. emitter 2. collector 3. base KTC3207 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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