2011-10-05 1 bcm846s 1 6 2 3 5 4 npn silicon af transistor array ? precision matched transistor pair: ? i c 10% ? for current mirror applications ? low collector-emitter saturation voltage ? two (galvanic) internal isolated transistors ? complementary type: bcm856s ? bcm846s: for orientation in reel see package information below ? pb-free (rohs compliant) package ? qualified according aec q101 eha07178 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package bcm846s 1ms 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sot363 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 65 v collector-emitter voltage v ces 80 collector-base voltage v cbo 80 emitter-base voltage v ebo 6 collector current i c 100 ma peak collector current, t p 10 ms i cm 200 total power dissipation- t s = 115 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150
2011-10-05 2 bcm846s thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 140 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 a v (br)ceo 65 - - v collector-base breakdown voltage i c = 10 a, i e = 0 a v (br)cbo 80 - - collector-emitter breakdown voltage i c = 10 a, v be = 0 a v (br)ces 80 - - emitter-base breakdown voltage i e = 10 a, i c = 0 a v (br)ebo 6 - - collector-base cutoff current v cb = 30 v, i e = 0 a v cb = 30 v, i e = 0 a, t a = 150 c i cbo - - - - 0.015 5 a dc current gain- 2) i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v h fe - 200 250 290 - 450 - collector-emitter saturation voltage 2) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 90 200 300 650 mv base emitter saturation voltage 2) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 900 - - base-emitter voltage- 2) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 660 - 700 770 matching i b = 1 a, v ce1 = v ce2 = 1.0v i b = 100 a, v ce1 = v ce2 = 1.0v ? i c -10 -10 - - 10 10 % 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation) 2 puls test: t < 300s; d < 2%
2011-10-05 3 bcm846s electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.95 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 9 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h 11e - 4.5 - k ? open-circuit reverse voltage transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 12e - 2 - 10 -4 short-circuit forward current transf. ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e - 330 - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s noise figure i c = 200 a, v ce = 5 v, f = 1 khz, ? f = 200 hz, r s = 2 k ? f - - 10 db
2011-10-05 4 bcm846s dc current gain h fe = ? ( i c ) v ce = 5v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c collector-emitter saturation voltage i c = ? ( v cesat ), h fe = 20 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c base-emitter saturation voltage i c = ? ( v besat ), h fe = 20 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c output characteristics i c = ? ( v ce ), i b = parameter 0 1 2 3 v 5 v ce 0 1 2 3 4 5 6 7 8 9 10 11 12 ma 15 i c ib = 8 ua ib = 12 ua ib = 16 ua ib = 20 ua ib = 24 ua ib = 28 ua ib = 36 ua ib = 4ua ib = 32 ua ib = 40 ua
2011-10-05 5 bcm846s collector current i c = ? ( v be ) 0.4 0.5 0.6 0.7 0.8 v 1 v be -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 a i c 1 v 5 v collector cutoff current i cbo = ? ( t a ) v cbo = 30 v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c transition frequency f t = ? ( i c ) v ce = parameter in v, f = 2 ghz 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 1 2 3 4 5 6 7 8 9 10 pf 12 c cb (c eb ) ccb ceb
2011-10-05 6 bcm846s total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 25 50 75 100 125 150 175 200 225 250 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2011-10-05 7 bcm846s definition of matching ? i c = ( i c2 - i c1 )/ i c1
2011-10-05 8 bcm846s p ackage sot363 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. small variations in positioning of date code, type code and manufacture are possible. manufacturer 2005, june date code (year/month) bcr108s type code pin 1 marking laser marking 0.3 0.7 0.9 0.65 0.65 1.6 0.2 4 2.15 1.1 8 2.3 pin 1 marking +0.1 0.2 1 6 23 5 4 0.2 2 +0.1 -0.05 0.15 0.1 1.25 0.1 max. 0.9 0.1 a -0.05 6x 0.1 m 0.65 0.65 2.1 0.1 0.1 0.1 min. m 0.2 a pin 1 marking
2011-10-05 9 bcm846s edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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