? semiconductor components industries, llc, 2013 september, 2013 ? rev. 6 1 publication order number: mbra340t3/d mbra340t3g, NRVBA340T3G surface mount schottky power rectifier sma power surface mount package employing the schottky barrier principle in a large area metal ? to ? silicon power diode. state of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j ? bent leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? very low forward voltage drop ? guardring for stress protection ? nrvba prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* mechanical characteristics: ? case: epoxy, molded ? weight: 70 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? polarity: cathode lead indicated by polarity band ? esd ratings: ? machine model = c ? human body model = 3b ? device meets msl 1 requirements *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information schottky barrier rectifier 3.0 amperes 40 volts marking diagram sma case 403d style 1 a34 ayww http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mbra340t3g sma (pb ? free) 5,000 / tape & reel ** cathode anode a34 = device code a = assembly location y = year ww = work week = pb ? free package 12 NRVBA340T3G sma (pb ? free) 5,000 / tape & reel ** ** 12 mm tape, 13? reel
mbra340t3g, NRVBA340T3G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v average rectified forward current (at rated v r , t l = 100 c) i o 3.0 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a storage/operating case temperature t stg , t c ? 55 to +150 c operating junction temperature (note 1) t j ? 55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance ? junction ? to ? lead (note 2) thermal resistance ? junction ? to ? ambient (note 2) r jl r ja 15 81 c/w 2. mounted on 2 square pc board with 1 square total pad size, pc board fr4. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 3.0 a) v f t j = 25 c t j = 100 c volts 0.450 0.390 maximum instantaneous reverse current (v r = 40 v) i r t j = 25 c t j = 100 c ma 0.3 15 3. pulse test: pulse width 250 s, duty cycle 2.0%. typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage 10 1 0.1 v f , instantaneous forward voltage (volts) 0.10 0.30 0.50 t j = 125 c t j = ? 55 c t j = 25 c i f , instantaneous forward current (amps) 0.20 0.40 0.60 t j = 100 c 10 1 0.1 v f , maximum instantaneous forward voltage (volts) 0.10 0.30 0.50 t j = 125 c t j = ? 55 c t j = 25 c i f , instantaneous forward current (amps) 0.20 0.40 t j = 100 c 0.60
mbra340t3g, NRVBA340T3G http://onsemi.com 3 figure 3. typical reverse current figure 4. maximum reverse current v r , reverse voltage (volts) 100e ? 3 10e ? 3 10e ? 6 100e ? 6 30 40 20 10 0 i r , reverse current (amps) 100e ? 9 100e ? 12 t j = 125 c 1e ? 3 1e ? 6 10e ? 9 1e ? 9 t j = ? 55 c t j = 25 c t j = 100 c v r , reverse voltage (volts) 100e ? 3 10e ? 3 10e ? 6 100e ? 6 30 40 20 10 0 i r , maximum reverse current (amps) t j = 125 c 1e ? 3 1e ? 6 t j = ? 55 c t j = 25 c t j = 100 c figure 5. current derating 25 50 75 0 2.5 i o , average forward current (amps) t l , lead temperature ( c) figure 6. forward power dissipation 0.5 1.5 2 3 0 1 2.5 1.8 0 0.6 i o , average forward current (amps) p fo , average power dissipation (watts) figure 7. capacitance 0.5 1 1.5 2 5 3 3.5 4.5 square wave dc 3.5 5 4.5 0.2 0.4 1.0 0.8 1.6 100 150 125 figure 8. typical operating temperature derating v r , reverse voltage (volts) 30 25 20 15 10 5 0 100 1000 c, capacitance (pf) 40 v r , dc reverse voltage (volts) 30 25 20 15 10 5 0 115 105 95 85 75 65 55 125 t j , derated operating temperature ( c) i pk /i o = 10 i pk /i o = 5 i pk /i o = freq = 20 khz 1.4 1.2 dc square wave i pk /i o = i pk /i o = 5 i pk /i o = 10 i pk /i o = 20 35 t j = 25 c 40 35 r ja = 22 c/w r ja = 43 c/w r ja = 96 c/w r ja = 81 c/w 4 4 r ja = 63 c/w
mbra340t3g, NRVBA340T3G http://onsemi.com 4 figure 9. thermal response, junction ? to ? ambient (min pad) t, time (s) 0.0001 0.001 0.1 0.00001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.1 1 10 100 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01 figure 10. thermal response, junction to ambient (1 inch pad) t, time (s) 0.0001 0.001 0.1 0.00001 0.01 1 10 100 1000 r (t) , transient thermal resistance ( c/w) 0.1 1 10 100 d = 0.5 0.2 0.1 single pulse 0.05 0.02 0.01
mbra340t3g, NRVBA340T3G http://onsemi.com 5 package dimensions dim a min nom max min millimeters 1.97 2.10 2.20 0.078 inches a1 0.05 0.10 0.15 0.002 b 1.27 1.45 1.63 0.050 c 0.15 0.28 0.41 0.006 d 2.29 2.60 2.92 0.090 e 4.06 4.32 4.57 0.160 l 0.76 1.14 1.52 0.030 0.083 0.087 0.004 0.006 0.057 0.064 0.011 0.016 0.103 0.115 0.170 0.180 0.045 0.060 nom max 4.83 5.21 5.59 0.190 0.205 0.220 h e sma case 403d ? 02 issue f style 1: pin 1. cathode (polarity band) 2. anode e bd l c a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 403d ? 01 obsolete, new standard is 403d ? 02. polarity indicator optional as needed (see styles) 4.0 0.157 2.0 0.0787 2.0 0.0787 mm inches scale 8:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbra340t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
