2SB985 transistor (pnp) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : -3 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -6 v collector cut-off current i cbo v cb = -40 v, i e =0 -1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -1 a h fe(1) v ce = -2 v, i c = -100 ma 100 560 dc current gain h fe(2) v ce = -2 v, i c = -3 a 40 collector-emitter saturation voltage v ce(sat) i c = -2 a, i b = -100 ma -0.7 v base-emitter saturation voltage v be(sat) i c = -2 a, i b = -100 ma -1.2 v transition frequency f t v ce = -10 v, i c = -50 ma 100 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 50 pf classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 to-92mod 1. emitter 2. collector 3. base 123 2SB985 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
