v d s = - 30 v rd s ( o n ) , v g s @ - 10 v , i d s @ - 10 . 5 a = 18m rd s ( o n ) , v g s @ - 4 . 5 v , i d s @ - 6 . 0 a = 30m f ea t u r es a d v an c ed t r en c h p r o c e ss t e c hno l o gy hi g h d en s i t y c e ll d e s i g n f o r ul t r a lo w o n - r e s i s t an ce p a ck a g e di m en s i ons m illi m e t er m illi m e t er r e f. m in . m a x . r e f . m in . m a x . a 5 . 80 6 . 20 m 0 . 10 0 . 25 b 4 . 80 5 . 00 h 0 . 35 0 . 49 c 3 . 80 4 . 00 l 1 . 35 1 . 75 d 0 a 8 a j 0 . 375 r e f . e 0 . 40 0 . 90 k 45 a f 0 . 19 0 . 25 g 1 . 27 t y p . m a x i m u m r a t i n g s and t he r m a l c ha r a c t e r i s t i cs ( t a = 25o c un l e ss o t he r w i s e no t ed) p a r a m e t er s y m b ol l i m it u n it dr a i n - s o u r c e v o l t a ge v ds - 30 g a t e - s o u r c e v o l t a ge v gs 20 v c o n t i nu o u s dr a i n c u rr e nt i d - 10 . 5 p u l s e d dr a i n c u rr e n t i dm - 50 a t a = 25 o c 2 . 5 m a x i m u m p o w e r d i ss i p a t i on t a = 75 o c p d 1 . 2 w o p e r a t i ng j un c t i o n a nd s t o r a g e t e m p e r a t u r e r a nge t j , t s tg - 55 t o 150 o c j un c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o un t e d ) r q ja 50 o c / w d d d d s s s g 8 7 6 5 1 2 3 4 30v p-channel enhancement mode mosfet PT4435 1 date:2011/05 www.htsemi.com semiconductor jinyu
e l e c t r i c a l ch a r a c t e r i s t i cs p a r a m e t er t es t c o nd i t i on s t a t ic dr a i n - s o u r c e b r ea k d o w n v o l t a ge bv d ss v gs = 0 v , i d = - 250u a - 30 v dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = - 10 v , i d = - 10 . 5 a 15 . 0 18 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = - 4 . 5 v , i d = - 6 . 0 a 20 . 0 30 . 0 m w g a t e t h r e s h o l d v o l t a ge v g s ( t h) v ds =v gs , i d = - 250u a - 1 - 1 . 4 - 3 v z e r o g a t e v o l t a g e dr a i n c u rr e nt i d ss v ds = - 24 v , v gs = 0 v - 1 u a g a t e b o d y l ea k a ge i g ss v gs = 20 v , v ds = 0 v 100 n a f o r w a r d t r a n s c o ndu c t a n ce g fs v ds = - 10 v , i d = - 5 a 21 s d y n a m ic t o t a l g a t e c h a r ge q g 37 . 2 g a t e - s o u r c e c h a r ge q gs 9 . 84 g a t e -dr a i n c h a r ge q gd v ds = - 15 v , i d = - 9 . 1 a v gs = 10 v 7 . 52 n c t u r n - o n d e l a y t i me t d ( on) t u r n - o n r i s e t i me t r t u r n - o f f d e l a y t i me t d ( o ff) t u r n - o f f f a ll t i me t f v dd = - 15 v , r l=15 i d = - 1 a , v g en = - 10 v r g = 6 w n s i npu t c a p a c i t a n ce c iss 1740 o u t pu t c a p a c i t a n c e c o ss 225 r e v e r s e t r a n s f e r c a p a c i t a n ce c r ss v d s = 8 v , v gs = 0 v f = 1 . 0 m h z 225 p f s o ur ce -d r a i n d i o de m a x . d i o d e f o r w a r d c u rr e n t i s a d i o d e f o r w a r d v o l t a g e v sd i s = - 2 . 1 a , v gs = 0 v 0 . 78 v n o t e : p u l s e t e s t: p u l s e w i d t h <= 300u s , du t y c y c l e <= 2% u n it max. min. typ. symbol 30v p-channel enhancement mode mosfet PT4435 2 date:2011/05 www.htsemi.com semiconductor jinyu
30v p-channel enhancement mode mosfet PT4435 3 date:2011/05 www.htsemi.com semiconductor jinyu
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