unisonic technologies co., ltd UT4430 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-333.a n-channel enhancement mode field effect transistor ? description the UT4430 uses utc advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for applications, such as high-side dc/dc conversion, notebook and sever. ? features * v ds (v)=30v * i d =18a (v gs = 10v) * r ds(on) < 5.5m ? @ v gs =10v * r ds(on) < 7.5m ? @ v gs =4.5v * halogen-free ? symbol source gate drain ? ordering information ordering number lead free halogen free package packing UT4430l-s08-r UT4430g-s08-r sop-8 tape reel free datasheet http:///
UT4430 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-333.a ? pin configuration free datasheet http:///
UT4430 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-333.a ? absolute maximum ratings (ta = 25c) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (ta=25c) (note 2) t 10s i d 18 a pulsed drain current (note 3) i dm 80 a avalanche current (note 3) i ar 30 a repetitive avalanche ener gy (note 3) l=0.3mh e ar 135 mj power dissipation (ta=25c) p d 3 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. surface mounted on 1 in 2 copper pad of fr4 board 3. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient (note) ja 59 75 c/w note: surface mounted on 1 in 2 copper pad of fr4 board ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 30 v drain-source leakage current i dss v ds =30v,v gs =0v 1 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na on characteristics gate threshold voltage v gs(th) v d s =v gs , i d =250a 1 1.8 2.5 v on state drain current i d(on) v gs =4.5v, v ds =5v 80 a v gs =10v, i d =18a 4.7 5.5 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =15a 6.2 7.5 m ? dynamic parameters input capacitance c iss 4660 6060 7270 pf output capacitance c oss 425 638 960 pf reverse transfer capacitance c rss v ds =15v, v gs =0 v, f=1mhz 240 355 530 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 0.2 0.45 0.9 ? switching parameters turn-on delay time t d(on) 12 16 ns turn-on rise time t r 8 12 ns turn-off delay time t d(off) 51.5 70 ns turn-off fall-time t f v gs =10v,v ds =15v, r l =0.83 ? , r gen =3 ? 8.8 14 ns total gate charge q g 80 103 124 nc gate source charge q gs 18 nc gate drain charge q gd v gs =10 v, v ds =15 v, i d =18 a 15 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1 a, v gs =0 v 0.7 1 v diode continuous forward current i s 4.5 a reverse recovery time t rr 33.5 44 ns reverse recovery charge q rr i f =18a, di/dt=100a/ s 22 30 nc free datasheet http:///
UT4430 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-333.a ? switching time test circuit vdc + - v dd v gs v gs v gs r g i d v ds l dut unclamped inductive switching (uis) test circuit unclamped inductive switching (uis) waveforms v ds i d v gs i ar bv dss 2 ar ar li 2 / 1 = e free datasheet http:///
UT4430 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-333.a ? switching time test circuit vdc + - v dd v gs i g i sd v ds - + v ds l dut diode recovery test circuit diode recovery waveforms v gs i sd i f di/dt i rm v ds t rr v dd idt - q = rr ? typical characteristics free datasheet http:///
UT4430 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-333.a drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 5 0 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 1.5 2.0 100 150 200 250 300 50 150 200 250 300 100 1.0 10 15 20 25 30 35 drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. free datasheet http:///
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