TK11A60D 2010-08-12 1 toshiba field effect transistor silicon n channel mos type ( -mos vi i ) TK11A60D switching regulator applications ? low drain-source on resistance: r ds (on) = 0.54 ? (typ.) ? high forward transfer admittance: ? y fs ? = 6.0 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 600 v) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v dc (note 1) i d 11 drain current pulse (note 1) i dp 44 a drain power dissipation (tc = 25c) p d 45 w single pulse avalanche energy (note 2) e as 396 mj avalanche current i ar 11 a repetitive avalanche energy (note 3) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 2.78 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 5.73 mh, r g = 25 , i ar = 11 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm jedec ? jeita sc-67 toshiba 2-10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection
TK11A60D 2010-08-12 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 5.5 a ? 0.54 0.65 forward transfer admittance |y fs | v ds = 10 v, i d = 5.5 a 1.5 6.0 ? s input capacitance c iss ? 1550 ? reverse transfer capacitance c rss ? 7 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 165 ? pf rise time t r ? 25 ? turn-on time t on ? 60 ? fall time t f ? 15 ? switching time turn-off time t off duty 1%, t w = 10 s ? 110 ? ns total gate charge q g ? 28 ? gate-source charge q gs ? 18 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 11 a ? 10 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 11 a pulse drain reverse current (note 1) i drp ? ? ? 44 a forward voltage (diode) v dsf i dr = 11 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1300 ? ns reverse recovery charge q rr i dr = 11 a, v gs = 0 v, di dr /dt = 100 a/ s ? 13 ? c marking r l = 36 0 v 10 v v gs v dd 200 v i d = 5.5 a v out 50 note 4: a line under a lot no. identifies the indication of product labels. not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/ 95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. lot no. note 4 k11a60d part no. (or abbreviation code)
TK11A60D 2010-08-12 3 0.1 0.1 1 10 100 1 10 v gs = 10 v, 15 v 0.1 10 100 0.1 1 100 25 100 tc = ? 55c 1 10 0 6 8 10 0 i d = 11 a 4 8 12 16 20 2.8 5.5 4 2 0 0 2 4 6 8 10 8 20 tc = ? 55c 25 100 12 16 4 16 12 8 4 0 20 0 20 50 40 30 10 v gs = 5 v 5.5 6 6.25 10,8 6.5 6.75 7 10 6 4 0 8 2 0 2 4 6 8 v gs = 4.5v 5 5.25 5.5 5.75 10,8 10 6 6.25 r ds (on) ? i d v ds ? v gs i d ? v ds ? y fs ? ? i d i d ? v ds forward transfer admittance ? y fs ? (s) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) drain-source voltage v ds (v) gate-source voltage v gs (v) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) i d ? v gs common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 20 v pulse test common source tc = 25c pulse test common source v ds = 20 v pulse test common source tc = 25c pulse test drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v)
TK11A60D 2010-08-12 4 0 10 50 500 200 100 300 400 0 30 20 20 8 4 12 16 0 v ds v dd = 100 v 200 400 v gs 40 80 40 0 0 40 80 120 160 20 60 200 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.2 1 10 100 ? 0.6 ? 0.8 ? 1.2 v gs = 0, ? 1 v 10 5 1 3 ? 0.4 ? 1.0 ? 1.4 160 ? 40 0 40 80 120 ? 80 2.5 2.0 1.5 1.0 0.5 0 i d = 11a 2.8a 5.5a r ds (on) ? tc v th ? tc i dr ? v ds p d ? tc capacitance c (pf) drain power dissipation p d (w) drain-source on resistance r ds (on) ( ) drain reverse current i dr (a) gate threshold voltage v th (v) drain-source voltage v ds (v) drain-source voltage v ds (v) case temperature tc (c) drain-source voltage v ds (v) case temperature tc (c) case temperature tc (c) total gate charge q g (nc) gate-source voltage v gs (v) common source v gs = 10 v pulse test common source tc = 25c pulse test common source v gs = 0 v f = 1 mhz tc = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 11 a tc = 25c pulse test capacitance ? v ds dynamic input / output characteristics
TK11A60D 2010-08-12 5 0.01 1 0.1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.001 1 10 0.01 10 0.1 1 100 1m 10m 100m 1 10 duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 single pulse ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 5.73 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w t p dm t duty = t/t r th (ch-c) = 2.78c/w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch-c) pulse width t w (s) safe operating area drain current i d (a) drain-source voltage v ds (v) *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max (continuous) avalanche energy e as (mj) channel temperature (initial) t ch (c) test circuit waveform dc operation tc = 25c 500 400 300 200 100 0 25 50 75 100 125 150
TK11A60D 2010-08-12 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduced without prior written permission from toshiba. even with toshiba?s written permission, reproducti on is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the ?toshiba se miconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expres sly stated in this document. product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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