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si6820dq vishay siliconix document number: 70790 s-56936erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n-channel, reduced q g , mosfet with schottky diode
v ds (v) r ds(on) ( ) i d (a) 20 0.160 @ v gs = 4.5 v 1.9 20 0.260 @ v gs = 3.0 v 1.5
v ka (v) v f (v) diode forward voltage i f (a) 20 0.5 v @ 1 a 1.5 si6820dq d s s g 1 2 3 4 8 7 6 5 k a a a tssop-8 top view d g s k a
parameter symbol limit unit drain-source voltage (mosfet) v ds 20 v reverse voltage (schottky) v ka 20 v gate-source voltage (mosfet) v gs 12 continuous drain current ( t j = 150 c ) ( mosfet ) a, b t a = 25 c i d 1.9 a continuous drain current (t j = 150 c) (mosfet) a, b t a = 70 c i d 1.5 a pulsed drain current (mosfet) i dm 8 a continuous source current (mosfet diode conduction) a, b i s 1.0 a average foward current (schottky) i f 1.5 pulsed foward current (schottky) i fm 30 maximum power dissipation (mosfet) a, b t a = 25 c p 1.2 w maximum power dissipation (mosfet) a , b t a = 70 c p d 0.76 w maximum power dissipation (schottky) a, b t a = 25 c p d 1.0 w maximum power dissipation (schottky) a , b t a = 70 c 0.64 operating junction and storage temperature range t j , t stg 55 to 150 c parameter device symbol typical maximum unit maximum junction - to - ambient (t 10 sec) a mosfet r 105 c/w m ax i mum j unc ti on- t o- a m bi en t (t 10 sec ) a schottky r thja 125 c/w maximum junction - to - ambient (t = steady state) a mosfet r thja 115 c/w m ax i mum j unc ti on- t o- a m bi en t (t = s t ea d y s t a t e ) a schottky 130 notes a. surface mounted on fr4 board. b. t 10 sec.
si6820dq vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70790 s-56936erev. c, 23-nov-98

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 25 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 6 a drain source on state resistance a r ds( ) v gs = 4.5 v, i d = 1.9 a 0.085 0.160 drain-source on-state resistance a r ds(on) v gs = 3.0 v, i d = 1.5 a 0.115 0.260 forward transconductance a g fs v ds = 15 v, i d = 1.9 a 5 s diode forward voltage a v sd i s = 1.0 a, v gs = 0 v 0.77 1.2 v dynamic b total gate charge q g v 35v v 45v i 03a 2.1 3.5 c gate-source charge q gs v ds = 3.5 v, v gs = 4.5 v, i d = 0.3 a 0.43 nc gate-drain charge q gd 0.30 turn-on delay time t d(on) v35vr115 8 20 rise time t r v dd = 3.5 v, r l = 11.5 i03av 45vr6 10 20 turn-off delay time t d(off) dd , l i d 0.3 a, v gen = 4.5 v, r g = 6 12 25 ns fall time t f 6 15 source-drain reverse recovery time t rr i f = 1.0 a, di/dt = 100 a/ s 31 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

parameter symbol test condition min typ max unit forward voltage drop v f i f = 1 a 0.45 0.50 v forward v oltage drop v f i f = 1 a, t j = 125 c 0.36 0.42 v mi r lk c i v r = 20 v 0.003 0.100 a maximum reverse leakage current i rm v r = 20 v, t j = 75 c 0.1 1 ma v r = 20 v, t j = 125 c 2 10 junction capacitance c t v r = 10 v 62 pf
si6820dq vishay siliconix document number: 70790 s-56936erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-3
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.04 0.08 0.12 0.16 0.20 02468 0 2 4 6 8 10 02468 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 100 200 300 400 500 0 4 8 12 16 20 v gs = 5 thru 3,5 v 25 c t c = 125 c c rss c oss c iss v ds = 3.5 v i d = 0.3 a v gs = 4.5 v i d = 1.9 a v gs = 4.5 v v gs = 3.0 v 2.5 v 2 v 55 c 1.5 v 3 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) )
si6820dq vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70790 s-56936erev. c, 23-nov-98
0.5 0.25 0.00 0.25 0.50 50 25 0 25 50 75 100 125 150 i d = 250 a 1.8 0 0.1 0.2 0.3 0.4 0123456 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1 10 i d = 1.9 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 0 1 25 30 10 20 10 30 1. duty cycle, d = 2. per unit base = r thja = 115 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 0.2 0.4 0.6 0.8 1.0 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j temperature ( c) power (w) source-drain diode forward voltage on-resistance vs. gate-to-source voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s time (sec) 15 5
si6820dq vishay siliconix document number: 70790 s-56936erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-5

junction capacitance (pf) 0.5 0.6 0.01 1 3 forward voltage drop v f forward voltage drop (v) forward current (a) i f 0 0.1 0.2 0.3 0.4 t j = 25 c t j = 150 c capacitance 0 50 100 150 200 250 0 4 8 12 16 20 v ka reverse voltage (v) 125 150 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.0001 1 20 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm reverse current vs. junction temperature normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance t j junction temperature ( c) reverse current (ma) i r 0 25 50 75 100 c t c iss 10 v 0.001 0.01 0.1 10 0.1 20 v
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