sot89 pnp silicon power (switching) transistor isssue 1 - december 1998 features * 2w power dissipation * 6a peak pulse current * excellent h fe characteristics up to 6amps * extremely low saturation voltage e.g. 16mv typ. * extremely low equivalent on-resistance; r ce(sat) 96m w at 2.5a partmarking detail - 718 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v peak pulse current ** i cm -6 a continuous collector current i c -2.5 a base current i b -500 ma power dissipation at t amb =25c p tot 1 ? 2 ? w w operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 15x15x0.6mm ? maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices refer to the handling instructions for soldering surface mount components. c b c e FCX718
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -20 -65 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -20 -55 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -8.8 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-15v emitter cut-off current i ebo -100 na v eb =-4v collector emitter cut-off current i ces -100 na v ces =-15v collector-emitter saturation voltage v ce(sat) -16 -130 -145 -40 -200 -220 -300 mv mv mv mv i c =-0.1a, i b =-10ma* i c =-1a, i b =-20ma* i c =-1.5a, i b =-50ma* i c =-2.5a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.98 -1.1 v i c =-2.5a, i b =-200ma* base-emitter turn-on voltage v be(on) -0.85 -0.95 v i c =-2.5a, v ce =-2v* static forward current transfer ratio h fe 300 300 150 35 15 475 450 230 70 30 i c =-10ma, v ce =-2v* i c =-0.1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-4a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 150 180 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 21 30 pf v cb =-10v, f=1mhz turn-on time t (on) 40 ns v cc =-15v, i c =-0.75a i b1 =i b2 =15ma turn-off time t (off) 670 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FCX718
1m 1m 1m 1m 1m i c - collector current (a) v ce(sat) v i c 0 ic/ib=10 ic/ib=50 ic/ib=100 +25c -55c +100c 0 i c - collector current (a) h fe v i c 0 i c - collector current (a) v be(on) v i c +100c +150c +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c +25c 0 i c - collector current (a) v be(sat) v i c +25c -55c ic/ib=50 vce=2v -55c ic/ib=50 +25c +150c +100c -55c 0.2 04 0.6 0.8 10m 100m 1 10 0.2 0.4 0.6 0.8 0.2 0.4 0.6 0.8 10m 100m 1 10 300 600 900 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 10m 100m 1 10 150 450 750 100m 100 1s 100ms 10 1 dc 0.01 v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s 11 0 0.1 typical characteristics FCX718
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