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| february 2010 doc id 17079 rev 1 1/15 15 stf19nm50n STP19NM50N, stw19nm50n n-channel 500 v, 0.2 ? , 14 a mdmesh? ii power mosfet in to-220fp, to-220 and to-247 features 100% avalanche tested low input capacitances and gate charge low gate input resistance application switching applications description this second generation of mdmesh? technology, applies the benefits of the multiple drain process to stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d stf19nm50n STP19NM50N stw19nm50n 550 v < 0.25 ? 14 a to-247 1 2 3 to-220 1 2 3 to-220fp 1 2 3 ! - v $ ' 3 table 1. device summary order codes marking package packaging stf19nm50n 19nm50n to-220fp tu b e STP19NM50N to-220 stw19nm50n to-247 www.st.com
contents stf19nm50n, STP19NM50N, stw19nm50n 2/15 doc id 17079 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 stf19nm50n, STP19NM50N, stw19nm50n electrical ratings doc id 17079 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ds drain-source voltage (v gs = 0) 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 14 14 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 9 9 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 56 56 (1) a p tot total dissipation at t c = 25 c 110 30 w dv/dt (3) 3. i sd 14 a, di/dt 400 a/s, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junc tion temperature 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1.14 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repet itive or not-repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 208 mj electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 4/15 doc id 17079 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 7 a 0.2 0.25 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1000 72 3 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 400 v, v gs = 0 -104-pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -51-pf r g intrinsic gate resistance f = 1 mhz open drain - 4.4 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 14 a, v gs = 10 v (see figure 19 ) - 34 5 18 - nc nc nc stf19nm50n, STP19NM50N, stw19nm50n electrical characteristics doc id 17079 rev 1 5/15 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 250 v, i d = 7 a, r g = 4.7 ?, v gs = 10 v (see figure 20 ) - 12 16 61 17 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 14 56 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 14 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 60 v (see figure 23 ) - 296 3.5 23 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 23 ) - 346 4 24 ns nc a electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 6/15 doc id 17079 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ? s ! - v stf19nm50n, STP19NM50N, stw19nm50n electrical characteristics doc id 17079 rev 1 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $ 3 6 ! 6 6 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! 6 $ 3 6 ' 3 ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v # 6 $ 3 6 p & # i s s # o s s # r s s ! - v % o s s 6 $ 3 6 ? * ! - v electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 8/15 doc id 17079 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature 6 ' 3 t h 4 * ? # n o r m ! - v 2 $ 3 o n 4 * ? # n o r m ! - v 6 3 $ ) 3 $ ! 6 4 * ? # 4 * ? # 4 * ? # ! - v " 6 $ 3 3 4 * ? # n o r m ! - v stf19nm50n, STP19NM50N, stw19nm50n test circuits doc id 17079 rev 1 9/15 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s package mechanical data stf19nm50n, STP19NM50N, stw19nm50n 10/15 doc id 17079 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. stf19nm50n, STP19NM50N, stw19nm50n package mechanical data doc id 17079 rev 1 11/15 figure 24. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 package mechanical data stf19nm50n, STP19NM50N, stw19nm50n 12/15 doc id 17079 rev 1 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data stf19nm50n, STP19NM50N, stw19nm50n package mechanical data doc id 17079 rev 1 13/15 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s revision history stf19nm50n, STP19NM50N, stw19nm50n 14/15 doc id 17079 rev 1 5 revision history table 10. document revision history date revision changes 09-feb-2010 1 first release stf19nm50n, STP19NM50N, stw19nm50n doc id 17079 rev 1 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com |
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