? 2012 ixys corporation, all rights reserved ds100233b(05/12) high voltage power mosfets IXTT6N150 ixth6n150 v dss = 1500v i d25 =6a r ds(on) 3.5 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1500 v v dgr t j = 25 c to 150 c, r gs = 1m 1500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c6a i dm t c = 25 c, pulse width limited by t jm 24 a i a t c = 25 c3a e as t c = 25 c 500 mj dv/dt i s i dm , v dd v dss ,t j 150 c 5 v/ns p d t c = 25 c 540 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to247) 1.13 / 10 nm/lb.in. weight to-268 4 g to-247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 3.5 n-channel enhancement mode avalanche rated fast intrinsic diode g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab) features z international standard packages z molding epoxies weet ul 94 v-0 flammability classification z fast intrinsic diode z low package inductance advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge z pulse circuits
ixys reserves the right to change limits, test conditions, and dimensions. IXTT6N150 ixth6n150 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 4.0 6.5 ms c iss 2230 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 170 pf c rss 64 pf t d(on) 22 ns t r 20 ns t d(off) 50 ns t f 38 ns q g(on) 67 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 12 nc q gd 36 nc r thjc 0.23 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 6 a i sm repetitive, pulse width limited by t jm 24 a v sd i f = 6a, v gs = 0v, note 1 1.3 v t rr 1.5 s i rm 12 a q rm 9 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3 (external) i f = 3a, -di/dt = 100a/ s v r = 100v, v gs = 0v to-247 outline terminals: 1 - gate 2 - drain 3 - source to-268 outline terminals: 1 - gate 2,4 - drain 3 - source e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2012 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 1 2 3 4 5 6 0 2 4 6 8 1012141618 v ds - volts i d - amperes v gs = 10v 7 v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 7 v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 7v 5 v 6v fig. 4. r ds(on) normalized to i d = 3a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 6a i d = 3a fig. 5. r ds(on) normalized to i d = 3a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 012345678910 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes IXTT6N150 ixth6n150
ixys reserves the right to change limits, test conditions, and dimensions. IXTT6N150 ixth6n150 fig. 7. input admittance 0 1 2 3 4 5 6 7 8 9 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 0123456789 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v gs - volts v ds = 750v i d = 3a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes 25s 100s 10ms dc r ds(on) limit t j = 150oc t c = 25oc single pulse 1ms
? 2012 ixys corporation, all rights reserved ixys ref: t_6n150 (5p)1-19-10 IXTT6N150 ixth6n150 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
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