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savantic semiconductor product specification silicon pnp power transistors 2SB812 d escription with to-3pn package wide area of safe operation low collector saturation voltage applications for audio frequency output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -4 a p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB812 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -1.5 v v be base-emitter on voltage i c =-1a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-60v i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-4v 40 250
savantic semiconductor product specification 3 silicon pnp power transistors 2SB812 package outline fig.2 outline dimensions

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