te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 1 (9) silicon npn high voltage switching transistor features monolithic integrated c-e-free-wheel diode high speed technology planar passivation very short switching times very low switching losses very low dynamic saturation very low operating temperature high reverse voltage applications electronic lamp ballast circuits switch-mode power supplies 14283 absolute maximum ratings t case = 25 c, unless otherwise specified parameter test conditions type symbol value unit collector-emitter voltage te13004d v ceo 300 v g TE13005D v ceo 400 v te13004d v ces 600 v TE13005D v ces 700 v emitter-base voltage v ebo 9 v collector current i c 6 a collector peak current i cm 8 a base current i b 2 a base peak current i bm 4 a total power dissipation t case 25 c p tot 57 w junction temperature t j 150 c storage temperature range t stg 65 to +150 c maximum thermal resistance t case = 25 c, unless otherwise specified parameter test conditions symbol value unit junction case r thjc 2.2 k/w
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 2 (9) electrical characteristics t case = 25 c, unless otherwise specified parameter test conditions type symbol min typ max unit transistor collector cut-off current v ce = 600 v te13004d i ces 50 a v ce = 700 v TE13005D i ces 50 a v ce = 600 v; t case = 150 c te13004d i ces 0.5 ma v ce = 700 v; t case = 150 c TE13005D i ces 0.5 ma collector-emitter breakdown voltage i c = 100 ma; l = 125 mh; i = 100 ma te13004d v (br)ceo 300 v b rea kd own vo lt age (figure 1) i measure = 100 m a TE13005D v (br)ceo 400 v emitter-base breakdown voltage i e = 1 ma v (br)ebo 9 v collector-emitter saturation voltage i c = 2 a; i b = 0.4 a v cesat 0.5 v base-emitter saturation voltage i c = 2 a; i b = 0.4 a v besat 1.6 v dc forward current v ce = 2 v; i c = 10 ma h fe 10 transfer ratio v ce = 2 v; i c = 1 a h fe 10 v ce = 2 v; i c = 4 a h fe 4 dynamic saturation i c = 2 a; i b = 0.2 a; t = 1 s v cesatdyn 2.5 v y voltage i c = 2 a; i b = 0.2 a; t = 3 s v cesatdyn 0.6 v gain bandwidth product v ce = 10 v; i c = 500 ma; f = 1 mhz f t 4 mhz free-wheel diode forward voltage i f = 2 a v f 1.2 1.5 v turn-on transient peak voltage i f = 2 a; di f /dt = 10 a/ s v fp 4 5 v reverse recovery cur- rent i f = 2 a; di f /dt = 5 a/ s; v s = 200 v i rm 4 a
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 3 (9) switching characteristics t case = 25 c, unless otherwise specified parameter test conditions type symbol min typ max unit resistive load (figure 3) turn on time i c = 2 a; i b1 = i b2 = 0.4 a; t on 0.25 0.4 s storage time c ; b1 b2 ; v s = 125 v t s 1.5 2.5 s fall time t f 0.15 0.3 s inductive load (figure 4) storage time i c = 2 a; i b1 = 0.4 a; l = 200 h; v l = 300 v; t s 1.2 2 s cross over time l = 200 h ; v clamp = 300 v ; v be = 5 v; t case = 100 c t c 0.4 0.7 s free-wheel diode reverse recovery time i f = 0.5 a; i r = 1 a; i r = 0.25 a t rr 0.7 1 s forward recovery time i f = 2 a; di f /dt = 10 a/ s t fr 0.4 s reverse recovery time i f = 2 a; di f /dt = 5 a/ s t rr 1.1 s y f ; f t irm 0.9 s v fp 100% 110% t fr v f t 95 9666 figure 1. turn on transient peak voltage
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 4 (9) + 3 pulses 94 8863 t p t 0.1 t p 10 ms v s2 10 v i b i c 5 i c l c v s1 v (br)ceo i (br)r 100 m i c v ce v (br)ceo i measure 0to30v figure 2. test circuit for v (br)ce0 0 t i c v ce r c v cc i b v bb r b i b1 94 8852 + (1) (1) fast electronic switch i b i b1 i b2 i c 0.9 i c 0.1 i c t t s t off t f t r t d t on figure 3. test circuit for switching characteristics resistive load
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 5 (9) 0 0.9 i c 0.1 i c t i c v ce v cc i b v bb r b i b1 v clamp + l c 94 8853 (1) (1) fast electronic switch (2) fast recovery rectifier (2) i b i b1 i b2 i c t t r t s figure 4. test circuit for switching characteristics inductive load
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 6 (9) typical characteristics (t case = 25 c unless otherwise specified) 95 10602 0 25 50 75 100 0.001 0.01 0.1 1 10 100 p total power dissipation ( w ) tot t case ( c ) 150 125 2.2 k/w 12.5 k/w 25 k/w 50 k/w r thja = 85 k/w figure 5. p tot vs.t case v - collector emitter saturation voltage (v) i b - base current (a) 95 9789 0.01 0.1 1 10 10 1 0.1 0.01 cesat t case = 25 c i c = 0.5a 1a 2a 4a figure 6. v cesat vs. i b h - forward dc current transfer ratio i c - collector current (a) 95 9785 fe 0.01 0.1 1 10 100 10 1 t case = 25 c v ce = 2v 10v 5v figure 7. h fe vs. i c 1 10 100 1000 0.01 0.1 1 10 100 i collector current ( a ) c v ce collector emitter voltage ( v ) 10000 95 10965 t p /t 0.01 t case = 25 c t p =10 s 50 s 100 s 500 s 5ms 1ms dc te13004d TE13005D figure 8. i c vs. v ce v - base emitter saturation voltage (v) i b - base current (a) 95 9788 besat 10 1 0.1 10 1 0.1 0.01 i c = 8a 4a 2a 1a 0.5a t case = 25 c figure 9. v besat vs. i b h - forward dc current transfer ratio v ce - collector emitter voltage (v) 95 9786 fe 10 8 6 4 2 0 25 20 15 10 5 0 t case = 25 c i c = 4a 2a 1a 0.5a figure 10. h fe vs. v ce
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 7 (9) 01234 0.01 0.1 1 10 t ,t switching times ( s ) s i c collector current ( a ) 5 95 9908 f t s t f h fe = 5 i b1 = i b2 t case = 25 c rload figure 11. t s , t f vs. i c 01234 0.01 0.1 1 10 t ,t switching times ( s ) s 5 95 9910 f i c collector current ( a ) t s t f h fe = 5 i b1 = i b2 t case = 25 c lload figure 12. t s , t f vs. i c 0.01 0.1 1 10 0.01 0.1 1 10 z thermal resistance for pulse cond. ( k/w ) thp t p pulse length ( ms ) 100 95 10962 dc t p /t = 0.5 0.2 0.1 0.01 0.02 0.05 figure 13. 01234 0.01 0.1 1 10 t ,t switching times ( s ) s i b2 /i b1 5 95 9909 f t s t f i c = 2a i b1 = 0.4a t case = 25 c rload figure 14. t s , t f vs. i b2 /i b1 01234 0.01 0.1 1 10 t ,t switching times ( s ) s i b2 /i b1 5 95 9911 f t s t f i c = 2a i b1 = 0.4a t case = 25 c lload figure 15. error during connect 6107
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 8 (9) dimensions in mm 14277
te13004d ? TE13005D telefunken semiconductors rev. a2, 18-jul-97 9 (9) ozone depleting substances policy statement it is the policy of temic telefunken microelectronic gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic telefunken microelectronic gmbh semiconductor division has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic telefunken microelectronic gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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