1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch+pch mosfet SH8M2 ? structure ? dimensions (unit : mm) silicon n-channel / p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application power switching, dc / dc converter. ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) SH8M2 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v dss symbol v gss i d i dp i s i sp p d c tch 150 c tstg ? 55 to + 150 tr1 : n-ch tr2 : p-ch limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. drain-source voltage gate-source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 v 30 v a a a a w / tota l ? 2 ? 1 20 3.5 14 1.6 14 2.0 ? 30 20 3.5 14 ? 1.6 ? 14 each lead has same dimensions sop8 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ? 2 ? 1 (8) (7) (1) (2) ? 2 ? 1 (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode free datasheet http:///
2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M2 n-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 20v, v ds =0v v dd 15v, v gs = 5v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 59 83 i d = 3.5a, v gs = 10v ? 93 130 m m m i d = 3.5a, v gs = 4.5v ? 107 150 i d = 3.5a, v gs = 4v 2.0 ?? sv ds = 10v, i d = 3.5a ? 140 ? pf v ds = 10v ? 45 30 ? pf v gs =0v ? 6 ? pf f=1mhz ? 6 ? ns ? 17 ? ns ? 4 ? ns ? 2.5 ? ns ? 0.8 3.5 nc ? 0.8 ? nc i d = 3.5a ?? nc r l = 4.29 , r g = 10 v dd 15 v i d = 1.75a v gs = 10v r l = 8.57 r g =10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.2 v i s = 6.4a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ?
3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet SH8M2 p-ch ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs = 20v, v ds =0v v dd ? 15v, v gs = ? 5v ? 30 ?? vi d = ? 1ma, v gs =0v ??? 1 av ds = ? 30v, v gs =0v ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 65 90 i d = ? 3.5a, v gs = ? 10v ? 100 140 m m m i d = ? 1.75a, v gs = ? 4.5v ? 120 165 i d = ? 1.75a, v gs = ? 4v 1.8 ?? sv ds = ? 10v, i d = ? 1.75a ? 490 ? pf v ds = ? 10v ? 110 75 ? pf v gs = 0v ? 10 ? pf f=1mhz ? 15 ? ns ? 35 ? ns ? 10 ? ns ? 5.5 ? ns ? 1.5 7.7 nc ? 2.0 ? nc i d = ? 3.5a ?? nc r l = 4.29 , r g = 10 v dd ? 15 v i d = ? 1.75a v gs = ? 10v r l = 8.57 r g = 10 ? body diode characteristics (source-drain) (ta=25 ? c) v sd ??? 1.2 v i s = ? 1.6a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ?
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