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4v drive nch + pch mosfet SH8M11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(sop8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circui t package taping code tb basic ordering unit (pieces) 2500 SH8M11 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 3.5 ? 3.5 a pulsed i dp ? 14 ? 12 a continuous i s 1.6 ? 1.6 a pulsed i sp 14 ? 12 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. type source current (body diode) drain current parameter power dissipation p d symbol 2.0 ? 55 to +150 unit limits 1.4 150 *1 *2 *1 sop8 (1) (8) (5) (4) (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) 1/10 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. free datasheet http:///
SH8M11 ? electrical characteristics (ta = 25 ? c) SH8M11 ? electrical characteristics (ta = 25 ? c) SH8M11 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5 v v gs = 10 v v gs = 4.5 v v gs = 4.0 v v gs = 2.8 v ta= 25 c pulsed fig. 1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 10 v v gs = 4.5 v v gs = 4.0 v v gs = 2.5 v v gs = 2.8 v ta= 25 c pulsed fig. 2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 0.1 1 10 v gs = 4.0 v v gs = 4.5 v v gs = 10 v . ta= 25 c pulsed fig. 4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 4.5 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 4/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet SH8M11 10 100 1000 0.1 1 10 v gs = 4.0 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 50 100 150 200 0 2 4 6 8 10 i d = 3.5 a i d = 1.75 a ta= 25 c pulsed fig. 10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) ta= 25 c v dd = 15 v v gs = 10 v r g = 10 pulsed t r fig. 11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 1 2 3 4 5 ta= 25 c v dd = 15 v i d = 3.5 a pulsed fig. 12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 5/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet SH8M11 1 10 100 1000 0.01 0.1 1 10 100 c iss c rss ta= 25 c f= 1 mhz v gs = 0 v c oss fig. 13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10 ms ta = 25 c single pulse : 1 unit mounted on ceramic board dc operation operation in this area is limited by r ds(on) (v gs = 10 v) p w = 100 us p w = 1 ms fig. 14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 ta = 25 c single pulse : 1 unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 89.3 c /w SH8M11 tr.2(pch) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 2.8v v gs = - 3.0v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 1 2 3 0 2 4 6 8 10 v gs = - 2.5v v gs = - 3.0v v gs = - 2.8v v gs = - 10v v gs = - 4.5v v gs = - 4.0v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 1000 0.1 1 10 v gs = - 4.0v v gs = - 4.5v v gs = - 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 7/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet SH8M11 10 100 1000 0.1 1 10 v gs = - 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 50 100 150 200 250 0 5 10 15 i d = - 1.7a i d = - 3.5a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd = - 15v v gs = - 10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = - 15v i d = - 3.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 8/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet SH8M11 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms t a = 25 c single pulse : 1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25 c single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 82.3 c /w r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes |
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