advanced power n-channel enhancement mode electronics corp. power mosfet lead-free package bv dss 25v low conductance loss r ds(on) 3.8m low profile ( < 0.7mm ) i d 19a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i d @t c =25 a i dm a p d @t a =25 w p d @t a =70 w p d @t c =25 w e as mj i ar a t stg t j rthj-c maximum thermal resistance, junction-case 4 3 /w rthj-a maximum thermal resistance, junction-ambient 3 58 /w data and specifications subject to change without notice AP1005BSQ 84 28.8 2.2 -40 to 150 201009152 1 parameter rating drain-source voltage 25 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 19 150 total power dissipation 3 thermal data storage temperature range 24 total power dissipation 3 1.4 41.7 continuous drain current, v gs @ 10v 4 -40 to 150 halogen-free product single pulse avalanche energy 5 operating junction temperature range total power dissipation 4 avalanche current continuous drain current, v gs @ 10v 3 15 pulsed drain current 1 g d s the AP1005BSQ used the latest apec power mosfet silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. the greenfet tm package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency dc-dc converters. greenfet tm sq g d d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =19a - 2.6 3.8 m ? ? source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) --52 a i sm pulsed source current ( body diode ) 1 - - 150 a v sd forward on voltage 2 i s =15a, v gs =0v - - 1 v t rr reverse recovery time i s =15a, v gs =0v, - 37 55 ns q rr reverse recovery charge di/dt=100a/s - 32 48 nc notes: 1.pulse width limited by max junction temperature. 2.pulse test 4.t c measured with thermocouple mounted to top (drain) of part. 5.starting t j =25 o c , l=0.1mh , r g =25 AP1005BSQ 2 3.surface mounted on 1 in 2 copper pad of fr4 board.
ap1005bs q fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =19a v g =10v 0 4 8 12 16 20 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 3 4 5 6 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t a =25 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
ap1005bs q fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thjc + t c rthja = 58 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =13v 0 400 800 1200 1600 2000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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