NTE2665 silicon npn transistor horizontal deflection output for high resolution display, color tv features: high voltage: v cbo = 1700v low saturation voltage: v ce(sat) = 3v max high speed: t f = 0.1 s typ absolute maximum ratings: (t c = +25 c unless otherwise specified) collector-base voltage, v cbo 1700v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector-emitter voltage, v ceo 800v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter-base voltage, v ebo 5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c continuous 28a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed 56a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . base current, i b 14a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector power dissipation, p c 220w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg -55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reli\ ability significantly even if the operating condi tions (i.e. operating te mperature/current/voltage, etc.) are within the a bsolute maximum ratings. electrical chracteristics: (t c = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb = 1700v, i e = 0 - - 1 ma emitter cutoff current i ebo v eb = 5v, i c = 0 - - 100 a collector-emitter breakdown voltage v (br)ceo i c = 10ma, i b = 0 800 - - v dc current gain h fe v ce = 5v, i c = 2a 22 - 48 v ce = 5v, i c = 8a 12.5 - 25.0 v ce = 5v, i c = 22a 4.5 - 7.5 collector-emitter saturation voltage v ce(sat) i c = 22a, i b = 5.5a - - 3 v base-emitter saturation voltage v be(sat) i c = 22a, i b = 5.5a - 1.0 1.5 v transition frequency f t v ce = 10v, i c = 100ma - 2 - mhz collector outptut capacitance c ob v cb = 10v, i e = 0, f = 1mhz - 470 - pf
electrical chracteristics (cont'd): (t c = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit switching time storage time t stg i cp = 10a, i b1 (end) = 1.4a, f h = 64khz - 2.6 3.0 s fall time t f - 0.2 0.3 s storage time t stg i cp = 8a, i b1 (end) = 1.2a, f h = 130khz - 1.4 1.6 s fall time t f - 0.10 0.15 s bc e .215 (5.45) .023 (0.6) .130 (3.3) dia .787 (20.0) .236 (6.0) 1.024 (26.0) .098 (2.5) .205 (5.2) max .039(1.0) note: pin2 connected to heat sink .807(20.5) max
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