june 2011 FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FDS89161LZ rev. c4 FDS89161LZ dual n-channel powertrench ? mosfet 100 v, 2.7 a, 105 m features ? max r ds(on) = 105 m at v gs = 10 v, i d = 2.7 a ? max r ds(on) = 160 m at v gs = 4.5 v, i d = 2.1 a ? high performance trench tech nology for extremely low r ds(on) ? high power and current handling capability in a widely used surface mount package ? cdm esd protection level > 2kv typical (note 4) ? 100% uil tested ? rohs compliant general description this n-channel logic level mosfets are produced using fairchild semiconductor?s advanced power trench ? process that has been special tailored to minimize the on-state resisitance and yet maintain s uperior switching performance. g-s zener has been added to enhance esd voltage level . application ? dc-dc conversion mosfet maximum ratings t a = 25 c unless otherwise noted thermal charac teristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current -continuous 2.7 a -pulsed 15 e as single pulse avalanche energy (note 3) 13 mj p d power dissipation t c = 25 c 31 w power dissipation t a = 25 c (note1a) 1.6 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 4.0 c/w r ja thermal resistance, junction to ambient (note 1a) 78 device marking device package reel size tape width quantity FDS89161LZ FDS89161LZ so-8 13 ?? 12 mm 2500 units g2 s1 g1 s2 d2 d2 d1 d1 pin 1 so-8 d1 d1 d2 d2 s2 s1 g1 g2 4 3 2 1 5 6 7 8 q2 q1
FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FDS89161LZ rev. c4 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 68 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a11.72.2v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.7 a 81 105 m v gs = 4.5 v, i d = 2.1 a 110 160 v gs = 10 v, i d = 2.7 a, t j = 125 c 140 182 g fs forward transconductance v ds = 10 v, i d = 2.7 a 7.8 s c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1mhz 227 302 pf c oss output capacitance 44 58 pf c rss reverse transfer capacitance 3 4 pf r g gate resistance 0.9 t d(on) turn-on delay time v dd = 50 v, i d = 2.7 a, v gs = 10 v, r gen = 6 3.8 10 ns t r rise time 1.2 10 ns t d(off) turn-off delay time 9.5 17 ns t f fall time 1.6 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 50 v, i d = 2.7 a 3.8 5.3 nc q g(tot) total gate charge v gs = 0 v to 5 v 2.1 2.9 nc q gs gate to source charge 0.7 nc q gd gate to drain ?miller? charge 0.7 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.7 a (note 2) 0.8 1.3 v v gs = 0 v, i s = 2 a (note 2) 0.8 1.2 t rr reverse recovery time i f = 2.7 a, di/dt = 100 a/ s 31 56 ns q rr reverse recovery charge 20 36 nc b) 135c/w when mounted on a minimun pad a) 78c/w when mounted on a 1 in 2 pad of 2 oz copper notes: 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting tj = 25 c, l = 0.3 mh, ias =25 a, vdd = 27 v, vgs = 10v. 4. the diode connected between gate and source serves only as protection against esd. no gate overvoltage rating is implied.
FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FDS89161LZ rev. c4 typical characteristics ( n-channel) t j = 25c unless otherwise noted figure 1. 012345 0 3 6 9 12 15 v gs = 8 v v gs = 3.5 v v gs = 6 v pulse duration = 80 p s duty cycle = 0.5% max v gs =5 v v gs = 4 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 03691215 0 1 2 3 4 v gs = 4 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 5 v v gs = 6 v v gs = 8 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 2.7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 100 200 300 400 500 t j = 125 o c i d = 2.7 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0246810 0 3 6 9 12 15 t j = 150 o c v ds = 50 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FDS89161LZ rev. c4 figure 7. 012345 0 2 4 6 8 10 i d = 2.7 a v dd = 50 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 75 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 400 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 2 1.0 1.5 2.0 2.5 3.0 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 1 2 3 4 v gs = 6 v r t ja = 78 o c/w v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . g a t e l e a k a g e c u r r e n t v s gate to source voltage 0 5 10 15 20 25 30 35 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v ds = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) figure 12. 0.1 1 10 100 400 0.005 0.01 0.1 1 10 20 10 s 100 us 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area typical characteristics ( n-channel) t j = 25c unless otherwise noted
FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FDS89161LZ rev. c4 figure 13. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 11 01 0 2 10 3 0.5 1 10 100 1000 p (pk) , peak transient power (w) single pulse r t ja = 135 o c/w t a = 25 o c t, pulse width (sec) figure 14. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 135 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics ( n-channel) t j = 25c unless otherwise noted
FDS89161LZ dual n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FDS89161LZ rev. c4 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. ? trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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