1 AM4407P analog power september, 2002 - rev. a preliminary publication order number: ds-am4407_c these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. p-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability ? extended vgs range (25) for battery pack applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) m( ? )i d (a) 9 @ v gs = -10v -15 13 @ v gs = -4.5v -11 product summary -30 symbol maximum units v ds -30 v gs 25 t a =25 o c-15 t a =70 o c-11 i dm 50 i s -2.1 a t a =25 o c3.1 t a =70 o c2.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units maximum junction-to-case a t <= 5 sec r jc 25 o c/w maximum junction-to-ambient a t <= 5 sec r ja 50 o c/w thermal resistance ratings parame te r 1 2 3 45 6 7 8
2 AM4407P analog power september, 2002 - rev. a preliminary publication order number: ds-am4407_c notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = -250 ua -1 v gate-body leakage i gss v ds = 0 v, v gs = 25 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d ( on ) v ds = -5 v, v gs = -10 v -50 a v gs = -10 v, i d = -13 a 9 v gs = -4.5 v, i d = -11 a 13 v gs = -10 v, i d = -13 a, tj = 55 o c11 forward tranconductance a g fs v ds = -5 v, i d = -13 a 44 s diode forward voltage v sd i s = 2.1 a, v gs = 0 v -0.7 v total gate charge q g 37.0 gate-source charge q gs 10.0 gate-drain charge q g d 14.5 turn-on delay time t d ( on ) 19 rise time t r 11 turn-off delay time t d(off) 121 fall-time t f 68 drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = -15 v, r l = 6 ? , id = -1 a, vgen = -10 v ns v ds = -15 v, v gs = -10 v, i d = -13 a nc dynamic b switching specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol
3 AM4407P analog power september, 2002 - rev. a preliminary publication order number: ds-am4407_c typical electrical characteristics (p-channel) figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 5. transfer characteristics 0 10 20 30 40 50 1.5 2 2.5 3 3.5 -v gs , g ate to source voltag e (v) -i d , drain current (a) t a = -125 o c 25 o c -55 o c v ds = -5.0v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a ) v gs = 0v t a = 125 o c 25 o c -55 o c 0 0.01 0.02 0.03 0.04 22.533.544.55 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -13a t a = 125 o c t a = 25 o c 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = -13a v gs = -10v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 -id, dirain current (a) rds(on), normalized drain-source on-resistance vgs = - 3 . 0 v -4.5v -6.0v -3.5v -4.0v -5.0v -10v 0 10 20 30 40 50 0 0.5 1 1.5 2 -vds, drain to source voltage (v) -id, drain current (a ) vgs = -10v -2.5v -3.0v -3.5v -4.5v -6.0v
4 AM4407P analog power september, 2002 - rev. a preliminary publication order number: ds-am4407_c typical electrical characteristics (p-channel) figure 9. maximum safe operating area figure 11. transient thermal response curve figure 7. gate charge characteristics 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (p f c iss c oss c rss f = 1 mhz v gs = 0 v 0 2 4 6 8 10 0 102030405060708090 q g , gate charge (nc) -v gs , gate-source voltage (v ) i d = -13a v ds = -10v -15v -20v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 100ms r ds(on) limit v gs = -10v single pulse r qja = 125 o c/w t a = 25 o c 10ms 1ms normalized thermal transient junction to ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse time (s) single pulse 0.02 0.05 0.1 0.2 0.5 r q j a (t) = r(t) + r q j a rqja = 125 o c/w t j - t a = p r q j a (t) t 1 t2 p(pk) 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 100 1000 time (s) peak transient power (w) figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation
5 AM4407P analog power september, 2002 - rev. a preliminary publication order number: ds-am4407_c package information so-8: 8lead h x 45
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