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copyright@winsemi microelectronics co., ltd., all right reserved. WFSA6503 rev.a feb.2012 n- channel and p-channel silicon mosfets features low on-resistance. composite type with an n-channel mosfet and a p-channel mosfet driving from a 4.5v/-4.5v supply voltage contai ned in a single package. high-density mounting. rohs compliant. applications general-purpose switching device for motor drives, inverters. absolute maximum ratings at ta=250c parameter symbol conditions ratings unit n-ch p-ch drain-to-source voltage v dss drain-source voltage 30 -30 v gate-to-source voltage v gss gate-source voltage 20 20 v drain current (dc) i d continuous drain current 6.9 -6 a drain current (pulse) i dp pw 10us, duty cycle 1% 30 -30 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 0.8mm) 1unit 1.3 1.3 w total dissipation p t mounted on a ceramic board (1000mm 2 0.8mm) 1.7 1.7 w channel temperature t ch maximum junction temperature 150 0 c storage temperature t stg storage temperature range -55~+150 0 c sop-8
steady, keep you advance WFSA6503 2 /10 n-channel electrical characteristics at ta=250c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =250ua, v gs =0v 30 - - v zero-gate voltage drain current i dss v ds =24v, v gs =0v - - 1 ua gate-to-source leakage current i gss v gs =+ 20v, v ds =0v - - + 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 1.6 2.0 v static drain-to-source on-state resistance r ds(on) i d =6.9a, v gs =10v - 17 25 m ? r ds(on) i d =5a, v gs =4.5v - 24 40 m ? input capacitance c iss v ds =15v, v gs =0v, f=1mhz - 680 820 pf output capacitance c oss - 102 - reverse transfer capacitance c rss -77 - turn-on delay time t d(on) v gs =10v, v ds =15v, r l =2.2 ? , r gen =3 ? -4.67 ns rise time t r -4.16 turn-off delay time t d(off) - 20.6 30 fall time t f -5.28 total gate charge q g v ds =15v, v gs =10v, i d =6.9a - 6.74 8.1 nc gate-to-source charge q gs -1.82 - gate-to-drain ?miller? charge q gd -3.2 - diode forward voltage v sd i s =1a, v gs =0v - 0.76 1.3 v steady, keep you advance WFSA6503 3 /10 n-channel typical characteristics at t a =25 0 c steady, keep you advance WFSA6503 4 /10 steady, keep you advance WFSA6503 5 /10 p-channel electrical characteristics at t a =25 0 c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =-250ua, v gs =0v -30 - - v zero-gate voltage drain current i dss v ds =-24v, v gs =0v - - -1 ua gate-to-source leakage current i gss v gs =+ 20v, v ds =0v - - + 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250ua -1.0 -1.4 -2.0 v static drain-to-source on-state resistance r ds(on) i d =-6a, v gs =-10v - 40 50 m ? r ds(on) i d =-5a, v gs =-4.5v - 60 76 m ? input capacitance c iss v ds =-15v, v gs =0v, f=1mhz - 920 1100 pf output capacitance c oss - 190 - reverse transfer capacitance c rss - 122 - turn-on delay time t d(on) v gs =-10v, v ds =-15v, r l =2.7 ? , r gen =3 ? - 7.7 11.5 ns rise time t r -5.78.5 turn-off delay time t d(off) - 20.2 30 fall time t f -9.514 total gate charge q g v ds =-15v, v gs =-10v, i d =-6a - 9.6 11.6 nc gate-to-source charge q gs - 2.7 11.6 gate-to-drain ?miller? charge q gd -4.5 - diode forward voltage v sd i s =-1a, v gs =0v - -0.8 -1.3 v steady, keep you advance WFSA6503 6 /10 p-channel typical characteristics at t a =25 0 c steady, keep you advance WFSA6503 7 /10 steady, keep you advance WFSA6503 8 /10 switching time test circuit steady, keep you advance WFSA6503 9 /10 sop8 package dimension unit:mm |
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