1 n-channel 30-v (d-s) mosfet features ? halogen-free acco rding to iec 61249-2-21 ? trenchfet ? power mosfet ? 100 % r g and uis tested applications ? notebo ok cpu core - high-side switch product summary v ds (v) r ds(on) ( ) i d (a ) a q g (t yp.) 30 0.0045 at v gs = 10 v 18 8 nc 0.0065 at v gs = 4.5 v 14. 5 so-8 sd sd sd gd 5 6 7 8 top v ie w 2 3 4 1 n -channel mosfet g d s notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 85 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted p a rameter symbol limit unit dr ain-source v oltage v ds 30 v gat e -source v o ltage v gs 20 contin uous d r ain current (t j = 150 c) t c = 25 c i d 18 a t c = 70 c 13.5 t a = 25 c 12 b, c t a = 70 c 9.6 b, c pulsed dr ai n current i dm 50 contin uous sour ce-drain diode current t c = 25 c i s 4.5 t a = 25 c 2.2 b, c single pulse a valanche current l = 0.1 mh i as 20 a valanche energ y e as 20 mj max imum power dissipation t c = 25 c p d 5 w t c = 70 c 3.2 t a = 25 c 2.5 b, c t a = 70 c 1.6 b, c ope rating junction and storage temperature range t j , t stg - 55 to 150 c thermal resist ance rat i ngs p aramet er symbol t ypical maximum un it maxim um junction-to-ambient b, d t 10 s r thj a 38 50 c/ w maxim um junction-to-foot (drain) steady state r thjf 20 25 www.din-tek.jp dt m44 10
2 no te s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. st resses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p aram eter sym bol t est co nditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 250 a 30 v v ds t emperature coefficient ' v ds /t j i d = 250 a 34 mv/c v gs( th) t emperature coefficient ' v gs (th) /t j - 4. 7 gate-so urce threshold voltage v gs(t h) v ds = v gs , i d = 250 a 1.0 2.2 v gate-s o urce leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v , v gs = 0 v 1 a v ds = 30 v , v gs = 0 v , t j = 55 c 10 on-state dr ain current a i d( on) v ds t 5 v , v gs = 10 v 30 a drain-source on-state re sistance a r ds( on) v gs 10 v , i d = 10 a 0.0038 0.0045 : v gs 4.5 v , i d = 7 a 0.0057 0.0065 f orward transconductance a g fs v ds = 15 v, i d = 10 a 30 s dy nami c b inpu t capacitan ce c is s v ds = 15 v , v gs = 0 v , f = 1 mhz 985 pf output c apacitance c os s 205 re verse t ransfer capacitance c rs s 76 t otal gate charge q g v ds = 15 v , v gs = 10 v , i d = 10 a 18 27 nc v ds = 15 v , v gs = 4.5 v , i d = 1 0 a 81 2 gate-source charge q gs 2.4 gate- dr a in charge q gd 2.3 g a te re si stance r g f = 1 mhz 0.3 1.3 2.6 : tu r n - o n d e l ay t i m e t d( on) v dd = 15 v , r l = 1.5 : i d # 10 a, v gen = 4.5 v , r g = 1 : 14 25 ns rise time t r 12 24 tur n -off delay time t d( off) 19 35 fal l time t f 91 8 tu r n - o n d e l ay t i m e t d( on) v dd = 15 v , r l = 1.5 : i d # 10 a, v gen = 10 v , r g = 1 : 816 rise time t r 10 20 tur n-off delay time t d( off) 16 30 fa l l time t f 91 8 drain -so urce body diode characteristics continuous source-drain diode current i s t c = 2 5 c 4.5 a pulse diode forward current a i sm 50 body diode v oltage v sd i s = 3 a 0.76 1.1 v body diode re v erse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 14 28 ns body diode reverse recovery charge q rr 51 0n c reverse recovery fall time t a 8 ns re verse reco v ery rise time t b 6 z z z g l q w h n m s ' 7 0
3 typica l c har ac teristics 25 c, unless otherwise noted output characteristics on -resistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10th r u 4 v v gs =3 v v ds - drain- to -so u rce v oltage ( v ) - drain c u rrent (a) i d 0.005 0.007 0.009 0.011 0.013 0.015 0 1 02 03 04050 v gs =10 v v gs =4 . 5 v - on-r esistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0.0 3.7 7.4 11.1 14. 8 1 8 .5 v ds =2 0 v i d =10a v ds =15 v v ds =10 v - gate-t o -so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer c haracteristics capacitance on-resistance vs. junction temperature 0.0 1.6 3.2 4. 8 6.4 8 .0 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate - to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 260 520 7 8 0 1040 1300 0 2.4 4. 8 7.2 9.6 12 c is s c oss v ds - drain- to -so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 i d =10a v gs =4 . 5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-r esistance r ds(on ) www.din-tek.jp dt m44 10
4 ty pi cal ch ara cteristics 25 c, unless otherwise noted source-drain dio de forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce- t o-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0. 8 - 0.6 - 0.4 - 0.2 0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5m a v ariance ( v ) v gs(th) t j - temperat u re (c) on-resist anc e vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 012 345 67 8 91 0 t j =25 c t j = 125 c i d =10a - on-r esistance ( ) r ds(on) v gs - gate - to-so u rce v oltage ( v ) 0 16 32 4 8 64 8 0 01 1 1 0 0. 0 0.01 0.1 time (s) po w er ( w ) safe op eratin g area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 1s 10 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms dc v ds - drain- to -so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dt m44 10
5 typica l c har ac teristics 25 c, unless otherwise noted * t he power dissipat ion p d is based on t j(max ) = 150 c , using junctio n-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 4 8 12 16 20 0 25 50 75 100 125 150 t c - case t emperat u re (c) i d - drain c u rrent (a) power, ju nct ion-to-ambient 0.0 1.2 2.4 3.6 4. 8 6.0 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) power de ra ting, junction-to-foot 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m44 10
6 ty pi cal ch ara cteristics 25 c, unless otherwise noted normalized th erma l transient im pedance, junction-to-ambient 0.2 0.1 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa c e mo u nted d u ty c ycle = 0.5 single p u lse 0.02 0.05 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.1 0.01 1 no r m alized t hermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 0.05 0.02 single p u lse www.din-tek.jp dt m44 10
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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