advanced power dual n-channel enhancement electronics corp. mode power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 14m dual n mosfet package i d 10a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 20110810pre 1 AP4224LGM-HF rating 20 + 12 10 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 8 pulsed drain current 1 30 preliminary thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 storage temperature range s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designe r with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =10a - - 14 m ? v gs =2.5v, i d =7a - - 23 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transconductance v ds =10v, i d =10a - 16 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =11a - 10 - nc q gs gate-source charge v ds =15v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.5 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 -21- ns t f fall time v gs =10v - 4.5 - ns c iss input capacitance v gs =0v - 1100 - pf c oss output capacitance v ds =15v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 1.3 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =11a, v gs =0 v , - 17 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP4224LGM-HF
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