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  miniskiip ? 3 3-phase bridge inverter skiip 38ac12t4v1 features  
     
    
  !
  "          #    $ %&'(') typical applications  * "  + ,-   "  . " )) ,/ remarks  - % 0 - 1 2
" * *   ."$ .    2 +)(3 .4$ 5 " .   2  6 7  "  $  *   8 9+(: 5 ..$  " 2 ; : $$$ <+(:37  1 
  = 6    .. ac absolute maximum ratings   2 )( 30  
 "  symbol conditions values units igbt - %6  8 2 )( 3 +):: -   8 2 +?( 3  2 )( 3 ++(   2 ?: 3 @'  a a 2 '4 . '::  - %6 b): -  " -  2 c:: -d - % 9 +( -d - %6 e +):: -  8 2 +(: 3 +: f inverse diode 1  8 2 +?( 3  2 )( 3 @@   2 ?: 3 ?@  1a a 2 '4 . '::  16a  " 2 +: .d   8 2 +(: 3 ( c  module 5a67 +&:   *8 ; :$$$<+(: 3   ; :$$$<+)( 3 -  0 + .$ )(:: - characteristics   2 )( 30  
 "  symbol conditions min. typ. max. units igbt - %5
7 - % 2 - % 0  2 . ( (0c &0( - %6 - % 2 : -0 - % 2 - %6  8 2 )( 3 :0' . - %:  8 2 )( 3 :0c :0@ -  8 2 +(: 3 :0? :0c -  % - % 2 +( -  8 2 )(3 +: ++ .g  8 2 +(:3 +( +& .g - %57 . 2 +:: 0 - % 2 +( -  8 2 )(3
"*$ +0c ) -  8 2 +(:3
"*$ )0) )0 -   &0) 1   - % 2 )(0 - % 2 : -  2 + a!h :0 + 1   :0'( 1 i - % 2 ;c$$$<+(- (&(     8 2 )( 3 ?0( j  57 +&:      2 + j -  2 &::- (  %  k 2 ):c: kf  2 +:: +'0? .l  57   2 + j  8 2 +(: 3 '@(    k 2 +) : kf - % 2 b+(- ?'  %  @0? .l  
58;7 "  :0 c mk/ skiip 38ac12t4v1 1 29-10-2008 lan ? by semikron
miniskiip ? 3 3-phase bridge inverter skiip 38ac12t4v1 features  
     
    
  !
  "          #    $ %&'(') typical applications  * "  + ,-   "  . " )) ,/ remarks  - % 0 - 1 2
" * *   ."$ .    2 +)(3 .4$ 5 " .   2  6 7  "  $  *   8 9+(: 5 ..$  " 2 ; : $$$ <+(:37  1 
  = 6    .. ac characteristics symbol conditions min. typ. max. units inverse diode - 1 2 - % 1. 2 +:: d - % 2 +( -  8 2 )( 3
"*$ )0) )0( -  8 2 +(: 3
"*$ )0+ )0 ( - - 1:  8 2 )( 3 +0' +0( -  8 2 +(: 3 :0@ +0+ -  1  8 2 )( 3 @ +: .g  8 2 +(: 3 +) +'0( .g a 1 2 +::   8 2 +)( 3 ++)  i  k 2 )&c: kf +& f %  - % 2 b+(- &0( .l  
58;7 "  :0&& mk/ a  
 , ) )0( n.  @(  temperature sensor   'o0  2 )(3 +::: g   'o0  2 +::3 +&?: g this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skiip 38ac12t4v1 2 29-10-2008 lan ? by semikron
fig. 1 typ. output characteristic fig. 2 rated current vs. temperature i c = f (t s ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skiip 38ac12t4v1 3 29-10-2008 lan ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt and diode fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovered charge skiip 38ac12t4v1 4 29-10-2008 lan ? by semikron
ul recognized file no. e 63 532  " skiip 38ac12t4v1 5 29-10-2008 lan ? by semikron


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Newark

Part # Manufacturer Description Price BuyNow  Qty.
SKIIP 38AC12T4V1
77R2488
SEMIKRON Igbt Module, Six, 1.2Kv, 115A; Continuous Collector Current:115A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKIIP 38AC12T4V1 100: USD110.44
50: USD117.34
25: USD119.06
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TME

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SKIIP 38AC12T4V1 25231600
SKIIP38AC12T4V1
SEMIKRON Module: IGBT; transistor/transistor; IGBT three-phase bridge 8: USD302.66
3: USD336.41
1: USD381.04
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