symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 17.4 30 50 60 r jc 4 7.5 w t a =70c 1.3 power dissipation a t a =25c p dsm 2 repetitive avalanche energy l=0.1mh c 20 a mj junction and storage temperature range a p d c 20 10 -55 to 175 t c =100c avalanche current c 12 i d 12 12 30 pulsed drain current c power dissipation b t c =25c continuous drain current g maximum units parameter t c =25c t c =100c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage 40 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AOD454Y n-channel enhancement mode field effect transistor features v ds (v) = 40v i d = 12 a (v gs = 10v) r ds(on) < 33 m ? (v gs = 10v) r ds(on) < 47 m ? (v gs = 4.5v) general description the AOD454Y uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in pwm, load switching and general purpose applications. standard product a od454y is pb free, inside and out. it uses pb-free die attach and plating material(meets rohs & sony 259 specifications). AOD454Yl is a green product ordering option. AOD454Y and AOD454Yl are electrically identical. g d s g d s t o-252 d-pak t op view drain connected to t ab alpha & omega semiconductor, ltd.
AOD454Y symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 30 a 25 33 t j =125c 39 52 34 47 m ? ? q g (10v) 9.2 nc q g (4.5v) 4.5 nc q gs 1.6 nc q gd 2.6 nc t d(on) 3.5 ns t r 6ns t d(off) 13.2 ns t f 3.5 ns t rr 22.9 ns q rr 18.3 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =12a, di/dt=100a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =1.7 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =20v, i d =12a gate source charge gate drain charge total gate charge m ? v gs =4.5v, i d =6a i s =1a, v gs =0v v ds =5v, i d =12a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250 a v ds =32v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =12a reverse transfer capacitance i f =12a, di/dt=100a/ s v gs =0v, v ds =20v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 0: oct. 2005 alpha & omega semiconductor, ltd.
AOD454Y typical electrical and thermal characteristic s 0 5 10 15 20 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 25 30 35 40 45 50 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =6a v gs =10v i d =12a 10 20 30 40 50 60 70 80 90 100 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =12a 25c 125c 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 4.5v 5v alpha & omega semiconductor, ltd.
AOD454Y typical electrical and thermal characteristic s 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 s 10ms 1ms dc r ds(on) limited t j(max) =175c, t a =25c v ds =20v i d =12a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =7.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t a =25c 10 alpha & omega semiconductor, ltd.
AOD454Y typical electrical and thermal characteristic s 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 2 4 6 8 10 12 14 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 5 10 15 20 25 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t ? ? = t a =25c 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd.
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