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MRFE6S9135HR3 mrfe6s9135hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequencies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. ? typical single- carrier w - cdma performance: v dd = 28 volts, i dq = 1000 ma, p out = 39 watts avg., full frequency band, 3gpp test model 1, 64 dpch with 50% clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 21 db drain efficiency ? 32.3% device output signal par ? 6.4 db @ 0.01% probability on ccdf acpr @ 5 mhz offset ? - 39.5 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, p out = 180 w cw (3 db input overdrive from rated p out ), designed for enhanced ruggedness features ? 100% par tested for guaranteed output power capability ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? optimized for doherty applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +66 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 136 w cw case temperature 80 c, 39 w cw r jc 0.39 0.48 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrfe6s9135h rev. 1, 11/2007 freescale semiconductor technical data MRFE6S9135HR3 mrfe6s9135hsr3 940 mhz, 39 w avg., 28 v single w - cdma lateral n - channel rf power mosfets case 465c - 02, style 1 ni - 880s mrfe6s9135hsr3 case 465b - 03, style 1 ni - 880 MRFE6S9135HR3 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) ii (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 66 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 1.4 2.1 2.9 vdc gate quiescent voltage (v dd = 28 vdc, i d = 1000 madc, measured in functional test) v gs(q) 2.2 2.9 3.7 vdc drain- source on - voltage (v gs = 10 vdc, i d = 2.8 adc) v ds(on) 0.15 0.2 0.35 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.3 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 410 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 343 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1000 ma, p out = 39 w avg. w - cdma, f = 940 mhz, single- carrier w - cdma, 3.84 mhz channel bandwidth carrier. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. par = 7.5 db @ 0.01% probability on ccdf. power gain g ps 20 21 23 db drain efficiency d 30.5 32.3 ? % output peak - to - average ratio @ 0.01% probability on ccdf par 6.1 6.4 ? db adjacent channel power ratio acpr ? - 39.5 -38 dbc input return loss irl ? -15 -9 db 1. part internally matched both on input and output. (continued)
MRFE6S9135HR3 mrfe6s9135hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1000 ma, 920 - 960 mhz bandwidth video bandwidth @ 160 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 10 ? mhz gain flatness in 40 mhz bandwidth @ p out = 39 w avg. g f ? 0.3 ? db average deviation from linear phase in 40 mhz bandwidth @ p out = 135 w cw ? 1 ? average group delay @ p out = 135 w cw, f = 940 mhz delay ? 3.6 ? ns part - to - part insertion phase variation @ p out = 135 w cw, f = 940 mhz, six sigma window ? ? 19 ? gain variation over temperature (-30 c to +85 c) g ? 0.015 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.01 ? dbm/ c
4 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 figure 1. MRFE6S9135HR3(hsr3) test circuit schematic z11 0.202 x 0.980 x 0.444 taper z12 0.114 x 0.444 microstrip z13 0.145 x 0.444 x 0.110 taper z14 0.180 x 0.110 microstrip z15 0.585 x 0.110 microstrip z16 0.443 x 0.065 microstrip z17 0.274 x 0.065 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1 0.263 x 0.065 microstrip z2 0.310 x 0.065 microstrip z3 0.910 x 0.120 microstrip z4 0.248 x 1.020 x 0.120 taper z5 0.363 x 1.020 microstrip z6 0.057 x 1.120 microstrip z7, z8 0.823 x 0.120 microstrip z9 0.060 x 0.980 microstrip z10 0.149 x 0.980 microstrip z1 rf input c1 c2 z2 z3 z4 z5 dut z9 c14 c25 rf output z10 z11 z12 z13 z17 c6 b1 v bias c3 z6 r1 c7 c9 c8 c11 c10 c12 z14 z15 z16 z7 c15 c16 c17 c18 z8 r2 c4 + c5 r3 c19 + v supply c20 c21 c22 c23 c24 + v supply c13 table 5. MRFE6S9135HR3(hsr3) test circuit component designations and values part description part number manufacturer b1 short rf bead 2743019447 fair- rite c1, c6, c15, c20, c25 39 pf chip capacitors atc100b390jt500xt atc c2, c14 0.8- 8.0 pf variable capacitors, gigatrim 27291sl johanson c3 2.0 pf chip capacitor atc100b2r0jt500xt atc c4 33 f, 25 v electrolytic capacitor emvy250ada330mf55g nippon chemi - con c5, c16, c17, c18, c21, c22, c23 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c7, c8 6.8 pf chip capacitors atc100b6r8jt500xt atc c9, c10, c11, c12, c13 4.7 pf chip capacitors atc100b4r7jt500xt atc c19, c24 470 f, 63 v electrolytic capacitors ekme630ell471mk25s united chemi - con r1, r3 3.3 , 1/3 w chip resistors crcw12103r30fkea vishay r2 2.2 k , 1/4 w chip resistor crcw12062201fkea vishay
MRFE6S9135HR3 mrfe6s9135hsr3 5 rf device data freescale semiconductor figure 2. mrfe6s9135hhr3(hsr3) test circuit component layout r3 mrfe6s9135h rev. 1 cut out area b1 r2 c4 c5 c6 c3 r1 c1 c2 c19 c15 c16 c17 c18 c7 c9 c10 c11 c12 c13 c14 c25 c23 c22 c21 c20 c8 c24
6 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 typical characteristics g ps , power gain (db) irl, input return loss (db) parc (dbc) ?20 0 ?5 ?10 ?15 980 860 irl g ps parc f, frequency (mhz) figure 3. single - carrier w - cdma broadband performance @ p out = 39 watts avg. 960 940 920 900 880 14 22 21 20 19 18 17 16 15 ?1.5 33 32 31 30 ?0.3 ?0.6 ?0.9 ?1.2 d , drain efficiency (%) d g ps , power gain (db) irl, input return loss (db) parc (dbc) ?20 0 ?5 ?10 ?15 980 860 irl g ps parc f, frequency (mhz) figure 4. single - carrier w - cdma broadband performance @ p out = 80 watts avg. 960 940 920 900 880 14 21 20 19 18 17 16 15 ?3.2 46 45 44 43 ?2.4 ?2.6 ?2.8 ?3 d , drain efficiency (%) d figure 5. two - tone power gain versus output power 100 17 1 i dq = 1500 ma 1250 ma p out , output power (watts) pep 750 ma 22 21 20 10 400 g ps , power gain (db) figure 6. third order intermodulation distortion versus output power 1 i dq = 500 ma p out , output power (watts) pep 750 ma 1000 ma 100 ?10 ?20 ?30 ?40 400 ?60 ?50 10 intermodulation distortion (dbc) imd, third order v dd = 28 vdc, p out = 80 w (avg.) i dq = 1000 ma, single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability (ccdf) 19 18 v dd = 28 vdc, p out = 39 w (avg.) i dq = 1000 ma, single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability (ccdf) 1000 ma 500 ma v dd = 28 vdc, f1 = 935 mhz, f2 = 945 mhz two?tone measurements 1250 ma 1500 ma v dd = 28 vdc, f1 = 935 mhz, f2 = 945 mhz two?tone measurements 1000 1020 1000 1020 13
MRFE6S9135HR3 mrfe6s9135hsr3 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 100 ?40 ?50 10 ?30 ?20 ?60 7th order v dd = 28 vdc, i dq = 1000 ma, f1 = 935 mhz f2 = 945 mhz, two?tone measurements 5th order 3rd order 400 figure 8. intermodulation distortion products versus tone spacing two?tone spacing (mhz) 10 ?60 im3?u ?10 ?30 1 100 imd, intermodulation distortion (dbc) ?40 ?20 im5?u im5?l im7?l 0 figure 9. output peak - to - average ratio compression (parc) versus output power 1 p out , output power (watts) ?1 ?3 ?5 30 actual ideal 0 ?2 ?4 output compression at the 0.01% probability on ccdf (db) 20 40 50 100 25 55 50 45 40 35 30 d , drain efficiency (%) ?1 db = 38.71 w 70 60 80 ?2 db = 54.21 w ?3 db = 85.92 w 300 16 0 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 28 vdc i dq = 1000 ma f = 940 mhz t c = ?30 c 25 c 85 c 10 23 22 21 20 19 50 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) 100 ?30 c 25 c 85 c 18 17 1 60 70 ?50 v dd = 28 vdc, p out = 160 w (pep) i dq = 1000 ma, two?tone measurements (f1 + f2)/2 = center frequency of 940 mhz im7?u im3?l 90 figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 28 v i dq = 1000 ma f = 940 mhz v dd = 24 v 32 v 17 22 020 19 20 21 18 40 60 80 100 120 140 160 180 200 220 240 single?carrier w?cdma, 3.84 mhz channel bandwidth v dd = 28 vdc, i dq = 1000 ma, f = 940 mhz input signal par = 7.5 db @ 0.01% probability (ccdf)
8 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 39 w avg., and d = 32.3%. mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 w - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 13. ccdf w - cdma 3gpp, test model 1, 64 dpch, 50% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. input signal par = 7.5 db @ 0.01% probability on ccdf input signal compressed output signal @ 39 w p out ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 14. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw ?acpr in 3.84 mhz integrated bw
MRFE6S9135HR3 mrfe6s9135hsr3 9 rf device data freescale semiconductor z load z source f = 820 mhz z o = 10 f = 980 mhz f = 820 mhz f = 980 mhz v dd = 28 vdc, i dq = 1000 ma, p out = 39 w avg. f mhz z source z load 820 3.39 - j6.99 2.18 - j0.80 840 3.32 - j6.86 2.20 - j0.71 860 3.05 - j6.74 2.21 - j0.66 880 2.72 - j6.47 2.20 - j0.64 900 2.46 - j6.16 2.20 - j0.64 920 2.41 - j5.80 2.18 - j0.62 940 2.41 - j5.58 2.13 - j0.63 960 2.38 - j5.45 2.03 - j0.66 980 2.13 - j5.38 1.87 - j0.70 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 package dimensions case 465b - 03 issue d ni - 880 MRFE6S9135HR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. 4. deleted dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.535 0.545 13.6 13.8 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 q .118 .138 3.00 3.51 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h f q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) s m a m aaa b m t (insulator) r m a m ccc b m t (lid) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 aaa 0.007 ref 0.178 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref case 465c - 02 issue d ni - 880s mrfe6s9135hsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.905 0.915 22.99 23.24 b 0.535 0.545 13.60 13.80 c 0.147 0.200 3.73 5.08 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.871 0.889 19.30 22.60 r 0.515 0.525 13.10 13.30 style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 d k c e h f m a m bbb b m t b b (flange) m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) s 0.515 0.525 13.10 13.30 m 0.872 0.888 22.15 22.55 bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.007 ref 0.178 ref
MRFE6S9135HR3 mrfe6s9135hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 nov. 2007 ? initial release of data sheet 1 nov. 2007 ? updated fig. 12, mttf versus junction temperature, to reflect a 32.3% typical efficiency rating, p. 8
12 rf device data freescale semiconductor MRFE6S9135HR3 mrfe6s9135hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6s9135h rev. 1, 11/2007

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