bipolarics, inc. part number B15V140 medium power silicon microwave transistor symbol parameters & conditions unit min. typ. max. v ce = 10v, i c = 7 0 ma, class a, unless stated (1) depends on package c cb collector base capacitance: v cb =10v f = 1mhz pf .75 f t gain bandwidth product ghz 8.0 |s 21 | 2 insertion power gain: f = 1.0 ghz db 15.6 f = 2.0 ghz db 9.0 p 1d b power output at 1db compression: f = 1.0 ghz dbm 27.0 nf noise figure: v ce =8v, i c =20 ma f = 1.0 ghz db 1.6 h fe forward current transfer ratio: v ce = 8v, i c =15 ma 30 100 300 i cbo collector cutoff current : v cb =10v a 0.4 i c = 75 ma features: high gain bandwidth product f t = 8 ghz typ @ i c = 70 ma high gain |s 21 | 2 = 15.6 db @ 1.0 ghz 9.0 db @ 2.0 ghz dice, plastic, hermetic and surface mount packages available performance d ata: electrical characteristics (t a = 25 o c) v cbo collector-base voltage 30 v symbol parameters rating units absolute maximum ratings: description and applications: bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and class c applications at vhf, uhf and microwave frequencies in 7.2 and 12v systems. depending on package type, the B15V140 can operate at up to 0.5w. these applications include high intermod receivers, catv and instrumentation amplifiers as well as pre-drivers, drivers and final stages in transmitter applications such as cellular telephone. package options in- clude dice, sot-223 surface mount, ceramic micro-x, 0. 14 5 " plastic sot-103 and 0. 230 " power flange package. product data sheet max (1) v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 1.5 v i c collector current (continuous) 120 ma i c collector current (instantaneous) 180 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c
page 2 bipolarics, inc. part number B15V140 medium power silicon microwave transistor typical s parameters: v ce = 3.3 v, i c = 75 ma z o = 50.0 ? t a =2 5 o (not e : s-parameters were taken in a 35 package.) freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 24.00 15.84 109 0.0233 54 0.5370 -162 0.1927 -103 0.50 18.20 8.12 90 0.0380 64 0.6683 178 0.1412 -141 1.00 12.00 3.98 78 0.0691 72 0.7161 176 0.1513 -141 1.50 8.80 2.75 68 0.1011 74 0.6760 159 0.1840 -141 2.00 6.20 2.04 58 0.1364 74 0.6606 152 0.2371 -145 2.50 4.30 1.64 48 0.1621 74 0.7413 145 0.2985 -153 3.00 2.70 1.36 44 0.1883 73 0.7585 142 0.3388 -146 3.50 1.70 1.21 34 0.2213 70 0.8035 133 0.3981 -151 4.00 0.00 1.00 29 0.2454 69 0.7498 131 0.5128 -153 v ce = 6 v, i c = 80 ma z o = 50.0 ? t a =2 5 o (not e : s-parameters were taken in a 35 package.) freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 24.75 17.27 110 0.0177 49 0.5688 -161 0.1995 -72 0.40 21.40 11.74 94 0.0301 62 0.7079 -179 0.1318 -98 0.60 17.40 7.41 85 0.0346 67 0.6839 173 0.1161 -102 0.80 15.30 5.82 81 0.0457 72 0.6683 174 0.1288 -106 1.00 13.40 4.67 77 0.0543 76 0.6839 174 0.1035 -100 1.20 11.90 3.93 72 0.0660 76 0.6606 162 0.1230 -104 1.50 9.80 3.09 66 0.0822 76 0.6531 153 0.1230 -114 2.00 7.30 2.31 57 0.1148 78 0.6760 149 0.1584 -116 2.50 5.40 1.86 48 0.1412 80 0.7328 133 0.2851 -134 3.50 2.7 1.36 34 0.1949 78 0.8317 120 0.3507 -140 4.00 0.9 1.10 26 0.2238 76 0.8222 120 0.4786 -142 freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 24.5 16.78 126 0.0239 42 0.5821 -146 0.3801 - 86 0.40 21.8 12.30 104 0.0263 48 0.7585 -168 0.2884 -122 0.60 18.3 8.222 92 0.0354 52 0.7244 -179 0.2600 -134 0.80 16.2 6.456 86 0.0426 56 0.7413 179 0.2600 -145 1.00 14.1 5.069 83 0.0467 64 0.7943 176 0.2371 -147 1.20 12.8 4.365 76 0.0543 65 0.7585 166 0.2630 -152 1.40 11.4 3.715 70 0.0602 67 0.7161 159 0.2630 -154 1.60 10.4 3.311 68 0.0691 68 0.7585 156 0.2691 -158 1.80 10.0 3.162 65 0.0724 70 0.7585 154 0.2884 -163 2.00 8.4 2.630 61 0.0794 71 0.7585 150 0.2851 -165 2.20 7.5 2.371 55 0.0841 71 0.7852 141 0.3235 -177 2.40 6.6 2.137 55 0.0870 74 0.7673 138 0.3054 -176 2.60 6.1 2.018 50 0.0954 73 0.8222 134 0.3630 180 2.80 5.2 1.819 47 0.1000 73 0.8222 132 0.3589 175 3.00 4.9 1.757 45 0.1109 76 0.8511 130 0.3935 180 3.20 3.9 1.566 40 0.1148 73 0.8317 126 0.4315 172 3.40 3.4 1.479 41 0.1216 75 0.8413 126 0.3845 171 3.60 3.1 1.428 33 0.1318 75 0.9120 118 0.4677 165 3.80 2.1 1.273 33 0.1303 74 0.8128 115 0.4216 159 4.00 2.0 1.258 35 0.1462 76 0.8709 119 0.4415 170 4.20 1.0 1.122 26 0.1479 72 0.8609 112 0.4518 156 v ce = 8 v, i c = 35 ma z o = 50.0 ? t a =2 5 o (not e : s-parameters were taken in a 35 package.)
page 3 bipolarics, inc. part number B15V140 medium power silicon microwave transistor typical s parameters: v ce = 8 v, i c = 75 ma z o = 50.0 ? t a =2 5 o c (not e : s-parameters were taken in a 35 package.) freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 25.0 17.78 124 0.0169 46 0.6456 -156 0.3090 -102 0.40 21.6 12.02 102 0.0229 54 0.8128 -136 0.2630 -136 0.60 18.4 8.317 92 0.0288 62 0.7843 176 0.2511 -145 0.80 16.2 6.456 87 0.0371 68 0.7952 174 0.2600 -155 1.00 14.2 5.128 83 0.0426 72 0.7943 172 0.2371 -155 1.20 12.8 4.365 78 0.0506 73 0.7943 162 0.2630 -159 1.40 11.4 3.715 72 0.0575 73 0.7478 156 0.2630 -169 1.60 10.1 3.198 70 0.0630 74 0.7943 154 0.2722 -164 1.80 9.1 2.851 66 0.0707 77 0.7762 151 0.2884 -168 2.00 8.2 2.570 63 0.0794 77 0.7673 148 0.2851 -168 2.20 6.9 2.213 58 0.0860 75 0.7852 139 0.3235 178 2.40 6.0 1.995 59 0.0891 78 0.7762 136 0.3090 180 2.60 5.5 1.883 54 0.1000 77 0.8222 132 0.3845 176 2.80 4.6 1.698 51 0.1047 77 0.8222 131 0.4265 172 3.00 4.3 1.640 49 0.1109 79 0.8413 129 0.4073 177 3.20 3.6 1.513 45 0.1174 76 0.8317 128 0.4073 169 3.40 3.0 1.412 46 0.1244 78 0.8413 125 0.3801 168 3.60 2.7 1.364 37 0.1348 75 0.9120 117 0.4677 162 3.80 1.5 1.188 17 0.1303 76 0.8128 114 0.4168 156 4.00 1.8 1.230 18 0.1462 79 0.8709 118 0.4365 167 4.20 0.6 1.071 30 0.1479 74 0.8609 111 0.4415 -154 v ce = 8 v, i c = 75 ma z o = 50.0 ? t a =2 5 o c (not e : s-parameters were taken in a 23 package.) freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 25.60 19.05 106 0.0151 -12 0.5128 -147 0.3090 -102 0.50 20.0 10.0 85 0.0208 20 0.4731 174 0.3162 -109 1.00 15.60 6.02 66 0.0446 58 0.5011 168 0.5623 -149 1.50 12.20 4.07 46 0.0676 68 0.4518 121 0.3198 4 2.00 9.0 2.82 20 0.0776 30 0.4027 87 0.6095 163 2.50 8.0 2.51 14 0.0562 -38 02238 21 0.5128 160 3.00 6.80 2.23 -54 0.1258 -36 0.6309 -1 0.6683 94 3.50 4.40 1.66 -79 0.0891 -30 0.6025 -23 0.7413 44 4.00 1.60 1.20 -90 0.0794 -64 0.3548 -65 0.7585 48 v ce = 8 v, i c = 80 ma z o = 50.0 ? t a =25 o c (note : s-parameters were taken in a -18 package.) freq. s21 s12 s11 s22 ghz db mag ang mag ang mag ang mag ang 0.20 26.80 21.87 100 0.0199 66 0.4216 -160 0.2691 -78 0.50 19.80 9.77 80 0.0431 70 0.5688 175 0.1972 -98 1.00 14.00 5.01 60 0.0841 71 0.5011 157 0.3162 -106 1.50 11.00 3.54 50 0.1258 72 0.4168 146 0.5308 -111 2.00 8.70 2.72 35 0.1778 65 0.3162 120 0.6760 -128 2.50 6.20 2.04 35 0.2344 62 0.2511 94 0.7673 -139 3.00 5.80 1.95 9 0.3019 56 0.2113 56 0.6165 -155 3.50 5.00 1.77 -2 0.3630 48 0.2018 0 0.6918 -158 4.00 4.60 1.69 -14 0.4731 35 0.2290 -60 0.5888 -160
page 4 bipolarics, inc. part number B15V140 medium power silicon microwave transistor 85 package: micro-x 85 mil ceramic 70 package: 70 mil stripline 5.0 min (all leads) 45 0.5+0.07 1.3 +0.4 -0.3 0.1 +0.06 -0.03 +0.4 -0.2 2.5 1.0+0.1 23 package: 0. 230 " beo flange lead 1 2 3 4 10 package emitter base emitter collector 14 , 85 , 86 , 35 base emitter collector emitter & 04 package notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice ( mm )
part number B15V140 medium power silicon microwave transistor page 5 bipolarics, inc. 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90 43 package: sot-143 02 package: sot-23j 22 package: sot-223 02 package: sot-23
bipolarics, inc. part number B15V140 midium power silicon microwave transistor page 6 85 package: 0 .0 85 " plastic micro-x 0 4 package: 0.145" plastic macro-x 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 86 package: 0. 0 8 " plastic micro-x, surface mount 87 package: 0. 0 85 " plastic micro-x, short lead
bipolarics, inc. part number B15V140 page 7 midium power silicon microwave transistor .160 (4.064) .050 (1.27) .020 (.508) .070 (1.778) .190 (4.826) emitter collector emitter base base emitter collector emitter 0.086 (2.184) notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice product data sheet 0 8 ceramic so8 package (mm) bipolarics, inc. 46 76 6 la ke vi ew bl vd . fre m on t, c a 94 53 8 phone: (510) 226-6565 fax: (510) 226-6765
|
