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savantic semiconductor product specification silicon pnp power transistors 2SA1232 d escription with to-3pfa package complement to type 2sc3012 applications audio frequency power amplifier. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -130 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i cm collector current-peak -15 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1232 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -0.6 -1.5 v v besat base-emitter saturation voltage i c =-5a; i b =-0.5a -1.3 -2.0 v i cbo collector cut-off current v cb =-130v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-2a ; v ce =-5v 60 320 h fe-2 dc current gain i c =-5a ; v ce =-5v 40 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 250 pf f t transition frequency i c =-1a ; v ce =-5v 60 mhz h fe-1 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1232 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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