TLRY4220 vishay semiconductors 1 (5) rev. a3, 11-oct-00 www.vishay.com document number 83117 resistor led for 12 v supply voltage color type technology angle of half intensity yellow TLRY4220 gaasp on gap 22 description these devices are developed for the automotive in- dustry with special requirements as for emc (electro magnetic compatibility) in motor vehicles with 12 v supply voltage. they are resistant against transient conduction (high voltage spikes) and interferences by conduction and coupling. the TLRY4220 series contains an integrated resistor for current limiting in series with the led chip. this al- lows the lamp to be driven from a 12 v source without an external current limiter. these tinted non-diffused lamps provide a high lumi- nous intensity. these leds are intended for space critical applica- tions such as automobile instrument panels, switches and others which are driven from a 12 v source. features with current limiting resistor for 12 v emc specified (din 40 839) resistant against transient high voltage spikes cost effective: save space and resistor cost standard 3 mm (t-1) package high luminous intensity luminous intensity categorized yellow color categorized 94 8488 v s out 16496 applications status light in cars off / on indicator in cars background illumination for switches off / on indicator in switches
TLRY4220 vishay semiconductors 2 (5) rev. a3, 11-oct-00 www.vishay.com document number 83117 absolute maximum ratings t amb = 25 c, unless otherwise specified TLRY4220 parameter test conditions symbol value unit reverse voltage v r 6 v forward voltage t amb 65 c v f 16 v power dissipation t amb 65 c p v 240 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 150 k/w optical and electrical characteristics t amb = 25 c, unless otherwise specified yellow ( TLRY4220 ) parameter test conditions type symbol min typ max unit luminous intensity v f = 12 v i v 6.3 15 mcd dominant wavelength v f = 12 v d 581 594 nm peak wavelength v f = 12 v p 585 nm angle of half intensity v f = 12 v j 22 deg forward current v s = 12 v i f 10 12 ma breakdown voltage i r = 10 a v br 6 70 v junction capacitance v r = 0, f = 1 mhz c j 50 pf typical characteristics (t amb = 25 c, unless otherwise specified) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 101214161820 v f forward voltage ( v ) 95 11438 f i forward current ( ma ) yellow figure 1 forward current vs. forward voltage 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 302010 0 10 20 30 40 50 60 70 80 90 100 t amb ambient temperature ( c ) 95 11439 v s = 12 v i relative forward current frel yellow figure 2 relative forward current vs. ambient temperature
TLRY4220 vishay semiconductors 3 (5) rev. a3, 11-oct-00 www.vishay.com document number 83117 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 302010 0 10 20 30 40 50 60 70 80 90 100 t amb ambient temperature ( c ) 95 11457 i f = 10 ma v relative forward voltage frel yellow figure 3 relative forward voltage vs. ambient temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0246810121416 v f forward voltage ( v ) 95 11458 i relative luminous intensity vrel yellow figure 4 relative luminous intensity vs. forward voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb ambient temperature ( c ) 95 11440 i relative luminous intensity vrel yellow v s = 12 v figure 5 rel. luminous intensity vs. ambient temperature 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 6 relative luminous intensity vs. wavelength 0.4 0.2 0 0.2 0.4 0.6 95 10041 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 7 rel. luminous intensity vs. angular displacement
TLRY4220 vishay semiconductors 4 (5) rev. a3, 11-oct-00 www.vishay.com document number 83117 dimensions in mm 95 10913
TLRY4220 vishay semiconductors 5 (5) rev. a3, 11-oct-00 www.vishay.com document number 83117 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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