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| SI6801DQ vishay siliconix document number: 70187 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n- and p-channel, reduced q g , fast switching mosfet v ds (v) r ds(on) ( ) i d (a) n - channel 20 0.160 @ v gs = 4.5 v 1.9 n - channel 20 0.260 @ v gs = 3.0 v 1.5 p - channel 20 0.190 @ v gs = 4.5 v 1.7 p - channel 20 0.280 @ v gs = 3.0 v 1.3 s 2 g 2 d 2 p-channel mosfet d 1 g 1 s 1 n-channel mosfet SI6801DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view parameter symbol n-channel p-channel unit drain-source voltage v ds 20 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 1.9 1.7 a continuous drain current (t j = 150 c) a t a = 70 c i d 1.5 1.3 a pulsed drain current i dm 8 a continuous source current (diode conduction) a i s 1.0 1.0 maximum power dissipation a t a = 25 c p d 1.0 w maximum power dissipation a t a = 70 c p d 0.64 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol n- or p-channel unit maximum junction-to-ambient a r thja 125 c/w notes a. surface mounted on fr4 board, t 10 sec. SI6801DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70187 s-56944erev. d, 23-nov-98 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.6 v gate threshold v oltage v gs(th) v ds = v gs , i d = 250 a p-ch 0.6 v gate - body leakage i gss v ds = 0 v , v gs = 12 v n-ch 100 na gate - body leakage i gss v ds = 0 v , v gs = 12 v p-ch 100 na zgvl dic i v ds = 20 v, v gs = 0 v n-ch 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v p-ch 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 70 c n-ch 25 a v ds = 20 v, v gs = 0 v, t j = 70 c p-ch 25 on - state drain current a i d(on) v ds = 5 v, v gs = 4.5 v n-ch 6 a on - state drain current a i d(on) v ds = 5 v, v gs = 4.5 v p-ch 6 a dis os r i a v gs = 4.5 v, i d = 1.9 a n-ch 0.120 0.160 drain - source on - state resistance a r ds(on) v gs = 4.5 v, i d = 1.7 a p-ch 0.155 0.190 drain - source on - state resistance a r ds(on) v gs = 3.0 v, i d = 1.5 a n-ch 0.160 0.260 v gs = 3.0 v, i d = 1.3 a p-ch 0.210 0.280 forward transconductance a g fs v ds = 15 v, i d = 1.9 a n-ch 5.4 s forward t ransconductance a g fs v ds = 15 v, i d = 1.7 a p-ch 4.0 s diode forward voltage a v sd i s = 1.0 a, v gs = 0 v n-ch 0.77 1.2 v diode forward v oltage a v sd i s = 1.0 a, v gs = 0 v p-ch 0.77 1.2 v dynamic b total gate charge q g nch l n-ch 1.7 3.5 c total gate charge q g n-channel v ds =35v v gs =45v i d =03a p-ch 3.5 7.0 c gate - source charge q gs v ds = 3.5 v, v gs = 4.5 v, i d = 0.3 a pch l n-ch 0.26 nc gate - source charge q gs p-channel v ds = 3.5 v, v gs = 4.5 v p-ch 0.76 nc gate - drain charge q gd v ds = 3 . 5 v , v gs = 4 . 5 v i d = 0.3 a n-ch 0.41 gate - drain charge q gd p-ch 0.70 turn - on delay t ime t d(on) nch l n-ch 7.3 15 turn - on delay t ime t d(on) nch l p-ch 6.0 15 rise time t r n-channel v dd = 3.5 v, r l = 11.5 n-ch 10.0 20.0 rise t ime t r v dd = 3 . 5 v , r l = 1 1 . 5 i d 0.3 a, v gen = 4.5 v, r g = 6 p-ch 10.0 20.0 turn - of f delay time t d(off) p-channel v35vr115 n-ch 11.0 20.0 ns turn - of f delay t ime t d(off) v dd = 3.5 v, r l = 11.5 i d 0.3 a, v gen = 4.5 v, r g = 6 p-ch 10.0 20.0 ns fall time t f i d 0.3 a, v gen 4.5 v, r g 6 n-ch 6.0 15 fall t ime t f p-ch 7.0 15 source-drain rr ti t rr n-channelei f = 1.0 a, di/dt = 100 a/ s n-ch 31 60 reverse recovery time t rr p-channelei f = 1.0 a, di/dt = 100 a/ s p-ch 35 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI6801DQ vishay siliconix document number: 70187 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-3 0 2 4 6 8 02468 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.5 1.0 1.5 2.0 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.08 0.16 0.24 0.32 0.40 02468 0 100 200 300 400 0 5 10 15 20 0 2 4 6 8 01234 v gs = 4.5, 4, 3.5, 3v 1.5 v 2 v v gs = 4.5 v v gs = 3 v i d = 0.3 a v gs = 4.5 v i ds = 1.9 a c rss c oss c iss output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) t c = 55 c 125 c 25 c 2.5 v v ds = 2.7 v 3.5 v 4.2 v SI6801DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70187 s-56944erev. d, 23-nov-98 1.25 1.50 power (w) 0 0.1 0.2 0.3 0.4 0123456 0.5 0.3 0.1 0.1 0.3 0.5 50 25 0 25 50 75 100 125 150 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.1 1 10 i d = 1.9 a i d = 250 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.001 0 0.1 80 100 20 40 60 110 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.01 0.00 0.25 0.50 0.75 1.00 t j = 25 c t j = 150 c SI6801DQ vishay siliconix document number: 70187 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-5 0 2 4 6 8 02468 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 01234 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.08 0.16 0.24 0.32 0.40 02468 0 100 200 300 400 500 600 700 0 5 10 15 20 0 2 4 6 8 01234 v gs = 4.5, 4, 3.5 v 3 v 2 v v gs = 4.5 v v gs = 3 v i d = 0.3 a v gs = 4.5 v i ds = 1.7 a c rss c oss c iss output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) t c = 55 c 125 c 25 c 2.5 v v ds = 2.7 v 4.2 v 3.5 v SI6801DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-6 document number: 70187 s-56944erev. d, 23-nov-98 1.25 1.50 power (w) 0 0.1 0.2 0.3 0.4 0123456 0.5 0.3 0.1 0.1 0.3 0.5 50 25 0 25 50 75 100 125 150 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.1 1 10 i d = 1.7 a i d = 250 a duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.001 0 0.1 80 100 20 40 60 110 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.01 0.00 0.25 0.50 0.75 1.00 t j = 150 c t j = 25 c |
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