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www.irf.com 1 03/16/09 IRF6797MPBF irf6797mtrpbf hexfet power mosfet plus schottky diode applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage

fig 2. typical total gate charge vs. gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.57mh, r g = 25 ? , i as = 30a. directfet isometric sq sx st mq mx mt mp description the IRF6797MPBF combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection sol dering techniques. application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allow s dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6797MPBF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inducta nce to reduce both conduction and switching losses. this part contains an integrated schottky diode to reduce the qrr of the body drai n diode further reducing the losses in a synchronous buck circuit. the reduced losses make this product ideal for high frequency/high efficienc y dc-dc converters that power high current loads such as the latest generation of microprocessors. the IRF6797MPBF has been optimized f or parameters that are critical in synchronous buck converter?s sync fet sockets. rohs compliant containing no lead and bromide integrated monolithic schottky diode low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for cpu core dc-dc converters optimized for sync. fet socket of sync. buck converter low conduction and switching losses compatible with existing surface mount techniques 100% rg tested 0 20406080100120 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 30a v dss v gs r ds(on) r ds(on) 25v max 20v max 1.1m ? @ 10v 1.8m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 45nc 13nc 6.2nc 38nc 38nc 1.8v absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a max. 29 210 300 20 25 36 260 30 0 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 t y p i c a l r d s ( o n ) ( m ? ) i d = 36a t j = 25c t j = 125c

2 www.irf.com pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 10 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 1.1 1.4 m ? ??? 1.8 2.4 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -4.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 500 a ??? ??? 5.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 130 ??? ??? s q g total gate charge ??? 45 68 q gs1 pre-vth gate-to-source charge ??? 12 ??? q gs2 post-vth gate-to-source charge ??? 6.2 ??? nc q gd gate-to-drain charge ??? 13 ??? q godr gate charge overdrive ??? 14 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 19.2 ??? q oss output charge ??? 38 ??? nc r g gate resistance ??? 1.3 2.2 ? t d(on) turn-on delay time ??? 22 ??? t r rise time ???32???ns t d(off) turn-off delay time ??? 20 ??? t f fall time ??? 15 ??? c iss input capacitance ??? 5790 ??? c oss output capacitance ??? 1790 ??? pf c rss reverse transfer capacitance ??? 720 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 36 (body diode) a i sm pulsed source current ??? ??? 300 (body diode) v sd diode forward voltage ??? ??? 0.65 v t rr reverse recovery time ??? 30 45 ns q rr reverse recovery charge ??? 38 57 nc di/dt = 200a/s t j = 25c, i s = 30a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 30a v ds = v gs , i d = 10ma v ds = v gs , i d = 150a t j = 25c, i f = 30a v gs = 4.5v i d = 30a v gs = 0v v ds = 13v i d = 30a v dd = 13v, v gs = 4.5v conditions v gs = 0v, i d = 1.0ma reference to 25c, i d = 10ma v gs = 10v, i d = 38a v gs = 20v v gs = -20v v ds = 20v, v gs = 0v v ds = 13v v ds = 20v, v gs = 0v, t j = 125c mosfet symbol r g = 1.8 ? v ds = 13v, i d = 30a conditions see fig. 17 ? = 1.0mhz v ds = 16v, v gs = 0v

www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient (at lower pulse widths zth ja & zth jc are combined) used double sided cooling , mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at
surface mounted on 1 in. square cu (still air). with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 0.022 270 -40 to + 150 max. 89 2.8 1.8 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri 4 4 r 4 r 4 5 5 r 5 r 5 a a r 6 r 6 ri (c/w) i (sec)

4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.3v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.3v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 38a v gs = 10v v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 i d , drain current (a) 0 2 4 6 8 10 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v

www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10ma 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.6a 19a bottom 30a 0.01 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c t j = 150c single pulse 100sec 1msec 10msec dc

6 www.irf.com fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + -

www.irf.com 7 fig 18. for hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ! + - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! '
"#$%&&! "#$%&&!'%()& "!%*"#$%&&!

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"# $%&&'()% * ' ((% )&* g = gate d = drain s = source d d d d g s s

8 www.irf.com directfet part marking

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"# $%&&'()% *' ((% )&* min 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 max 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 min 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 max 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 code a b c d e f g h j k l m r p dimensions metric imperial gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free"

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/09 directfet tape & reel dimension (showing component orientation). note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6797mtrpbf). for 1000 parts on 7" reel, order irf6797mtr1pbf reel dimensions max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063

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